THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME AND ELECTRO-LUMINESCENCE DISPLAY PANEL HAVING THE SAME
First Claim
Patent Images
1. A thin-film transistor comprising:
- a gate electrode formed on a base substrate;
an active layer formed on the gate electrode to cover the gate electrode;
a source electrode and a drain electrode formed on the active layer, the source electrode being spaced apart from the drain electrode by a predetermined distance; and
a buffer layer formed between the active layer and the source electrode, and between the active layer and the drain electrode, the buffer layer formed to suppress an oxidation of the active layer.
2 Assignments
0 Petitions
Accused Products
Abstract
A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.
-
Citations
32 Claims
-
1. A thin-film transistor comprising:
-
a gate electrode formed on a base substrate;
an active layer formed on the gate electrode to cover the gate electrode;
a source electrode and a drain electrode formed on the active layer, the source electrode being spaced apart from the drain electrode by a predetermined distance; and
a buffer layer formed between the active layer and the source electrode, and between the active layer and the drain electrode, the buffer layer formed to suppress an oxidation of the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A method of manufacturing a thin-film transistor comprising:
-
forming a gate electrode on a base substrate;
forming a gate insulation layer on the substrate to cover the gate electrode;
forming an active layer on the gate insulation layer to cover the gate electrode;
forming a buffer layer on the active layer to suppress an oxidation of the active layer;
primarily etching first predefined portions of the buffer layer and the active layer;
forming a source electrode and a drain electrode on the primarily etched active layer, wherein the source electrode and the drain electrode are separated from each other by a predetermined distance; and
secondarily etching second predefined portions of the buffer layer and the active layer, using as an etching mask at least one of the source electrode and the drain electrode. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
-
-
27. A liquid crystal display panel comprising:
-
a first substrate having a thin-film transistor;
a second substrate disposed to face the first substrate; and
a liquid crystal layer interposed between the first substrate and the second substrate, wherein the thin-film transistor comprises;
a gate electrode formed on the first substrate;
an active layer formed on the gate electrode to cover the gate electrode;
a source electrode and a drain electrode formed on the active layer, the source electrode being separated from the drain electrode by a predetermined distance; and
a buffer layer formed between the active layer and the source electrode, and between the active layer and the drain electrode, the buffer layer formed to suppress an oxidation of the active layer. - View Dependent Claims (28)
-
-
29. An electro-luminescence display panel comprising:
-
a base substrate;
a switching thin-film transistor formed on the base substrate;
a driving thin-film transistor formed on the base substrate, the driving thin film transistor electrically connected to the switching thin-film transistor; and
an electro-luminescence device connected to the driving thin-film transistor, and configured to generate a light, wherein the driving thin-film transistor comprises;
a driving gate electrode formed on the base substrate;
a driving active layer formed on the driving gate electrode to cover the driving gate electrode;
a driving source electrode and a driving drain electrode formed on the driving active layer and separated by a predetermined distance; and
a driving buffer layer formed between the driving active layer and the driving source electrode, and between the driving active layer and the driving drain electrode, the driving buffer layer formed to suppress an oxidation of the driving active layer. - View Dependent Claims (30, 31, 32)
-
Specification