Semiconductor display device and method of manufacturing the same
First Claim
1. A semiconductor device having a protective circuit, the protective circuit comprising:
- a first capacitor electrode formed over a substrate;
a first inorganic insulating film formed over the first capacitor electrode;
an organic resin film formed over the first inorganic insulating film;
an opening formed in the organic resin film;
a second inorganic insulating film formed over the organic resin film and in contact with the first inorganic insulating film in the opening; and
a second capacitor electrode formed over the second inorganic insulating film, wherein the radius of curvature on a surface of the organic resin film is continuously lengthened as the distance from the opening is increased.
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Abstract
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
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Citations
14 Claims
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1. A semiconductor device having a protective circuit, the protective circuit comprising:
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a first capacitor electrode formed over a substrate;
a first inorganic insulating film formed over the first capacitor electrode;
an organic resin film formed over the first inorganic insulating film;
an opening formed in the organic resin film;
a second inorganic insulating film formed over the organic resin film and in contact with the first inorganic insulating film in the opening; and
a second capacitor electrode formed over the second inorganic insulating film, wherein the radius of curvature on a surface of the organic resin film is continuously lengthened as the distance from the opening is increased. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device having a protective circuit, the protective circuit comprising:
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a first capacitor electrode formed over a substrate;
a first inorganic insulating film formed over the first capacitor electrode;
an organic resin film formed over the first inorganic insulating film;
an opening formed in the organic resin film;
a second inorganic insulating film formed over the organic resin film and in contact with the first inorganic insulating film in the opening; and
a second capacitor electrode formed over the second inorganic insulating film, wherein an edges of the opening on a surface of the organic resin film has in section a parabolic shape whose principal axis is in a plane parallel to the substrate. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method of manufacturing a semiconductor display device having a TFT and lead wiring, the TFT having a semiconductor film, a gate insulating film in contact with the semiconductor film, and a gate electrode in contact with the gate insulating film and overlapping the semiconductor film, and the lead wiring in contact with the gate insulating film, the method comprising the steps of:
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forming a first inorganic insulating film over the lead wiring and the TFT;
forming an organic resin film over the first inorganic insulating film;
forming an opening in the organic resin film by partially exposing to the light, thereby the first inorganic insulating film being partially exposed;
forming a second inorganic insulating film over the organic resin film formed the opening and the partially exposed first inorganic insulating film;
etching the first inorganic insulating film, the second inorganic insulating film, and the gate insulating film in the opening, thereby partially exposing the lead wiring and the semiconductor film;
forming a transparent conductive film over the etched second inorganic insulating film and the partially exposed lead wiring;
polishing a surface of the transparent conductive film;
patterning the polished transparent conductive film, thereby forming a first wiring in contact with the partially exposed lead wiring and a pixel electrode;
forming a conductive film over the etched second inorganic insulating film, the partially exposed semiconductor film and the pixel electrode; and
patterning the conductive film, thereby forming a second wiring in contact with the partially exposed semiconductor film and the pixel electrode.
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14. A method of manufacturing a semiconductor display device having a TFT and lead wiring, the TFT having a semiconductor film, a gate insulating film in contact with the semiconductor film, and a gate electrode in contact with the gate insulating film and overlapping the semiconductor film, and the lead wiring in contact with the gate insulating film, the method comprising the steps of:
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forming a first inorganic insulating film over the lead wiring and the TFT;
forming an organic resin film over the first inorganic insulating film;
forming an opening in the organic resin film by partially exposing to the light, thereby the first inorganic insulating film being partially exposed;
forming a second inorganic insulating film over the organic resin film formed the opening and the partially exposed first inorganic insulating film;
etching the first inorganic insulating film, the second inorganic insulating film, and the gate insulating film in the opening, thereby partially exposing the lead wiring and the semiconductor film;
forming a conductive film over the etched second inorganic insulating film and the partially exposed semiconductor film;
patterning the conductive film, thereby forming the first wiring in contact with the partially exposed semiconductor film;
forming a transparent conductive firm over the etched second inorganic insulating film, the partially exposed lead wiring, and the first wiring;
polishing a surface of the transparent conductive film; and
patterning the polished transparent conductive film, thereby forming a second wiring in contact with the partially exposed lead wiring and a pixel electrode in contact with the first wiring.
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Specification