Nitride semiconductor light-emitting element and manufacturing method thereof

• US 20070096123A1
• Filed: 11/02/2006
• Published: 05/03/2007
• Est. Priority Date: 11/02/2005
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hata, Toshio, Utsumi, Takaaki, Kimura, Daigaku
• Application Number:
  US11/592,478
• Publication Number:
  US 20070096123A1
• Time in Patent Office: Days
• US Class Current: 257/86
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A nitride semiconductor light-emitting element, including a first-conductivity-type nitride semiconductor layer, an active layer, and a second-conductivity-type nitride semiconductor layer successively stacked on a substrate, in which a light extraction surface located above the second-conductivity-type nitride semiconductor layer has a conical or pyramidal projecting portion, as well as a method of manufacturing the nitride semiconductor light-emitting element are provided.

Claims

1. A nitride semiconductor light-emitting element comprising:

a first-conductivity-type nitride semiconductor layer;

an active layer; and

a second-conductivity-type nitride semiconductor layer, that are successively stacked on a substrate;

wherein

a light extraction surface located above said second-conductivity-type nitride semiconductor layer has a conical or pyramidal projecting portion.

2. The nitride semiconductor light-emitting element according to claim 1, wherein

said substrate is composed of at least one selected from the group consisting of Si, SiC, GaAs, ZnO, Cu, W, CuW, Mo, InP, GaN, and sapphire.

3. The nitride semiconductor light-emitting element according to claim 1, wherein

said projecting portion is implemented as at least one of a cone and a pyramid.

4. The nitride semiconductor light-emitting element according to claim 1, wherein

said projecting portion has a width in a range from at least 0.1 μ

m to at most 5 μ

m.

5. The nitride semiconductor light-emitting element according to claim 1, wherein

said projecting portion has a height from a bottom surface to a tip end in a range from at least 0.1 μ

m to at most 5 μ

m.

6. The nitride semiconductor light-emitting element according to claim 1, wherein

said light extraction surface is formed in a nitride semiconductor layer above said second-conductivity-type nitride semiconductor layer.

7. The nitride semiconductor light-emitting element according to claim 6, wherein

said nitride semiconductor layer where said light extraction surface is formed has a conductivity type of n.

8. The nitride semiconductor light-emitting element according to claim 7, wherein

an electrode is provided on said nitride semiconductor layer where said light extraction surface is formed, and an interface between said electrode and said nitride semiconductor layer where said light extraction surface is formed is flat.

9. The nitride semiconductor light-emitting element according to claim 1, wherein

said light extraction surface is formed in a translucent electrode layer above said second-conductivity-type nitride semiconductor layer.

10. The nitride semiconductor light-emitting element according to claim 9, wherein

said translucent electrode layer is composed of ITO or zinc oxide.

11. The nitride semiconductor light-emitting element according to claim 9, wherein

an electrode is provided on said translucent electrode layer, and an interface between said electrode and said translucent electrode layer is flat.

12. The nitride semiconductor light-emitting element according to claim 1, further comprising an intermediate nitride semiconductor layer located between said substrate and said first-conductivity-type nitride semiconductor layer.

13. The nitride semiconductor light-emitting element according to claim 12, wherein

a surface of said intermediate nitride semiconductor layer has a conical or pyramidal projecting portion.

14. A method of manufacturing the nitride semiconductor light-emitting element according to claim 1, comprising the step of forming a conical or pyramidal projecting portion on said light extraction surface with reactive ion etching.