Semiconductor device and method for fabricating the same
First Claim
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1. A semiconductor device having a MIS transistor, said MIS transistor comprising:
- a first gate insulating film formed on a semiconductor substrate;
a first gate electrode formed on the first gate insulating film;
a first sidewall covering the sides of the first gate electrode and the top surface of part of the semiconductor substrate and made of an insulating film forming an L shape in cross section;
first source/drain regions formed in regions of the semiconductor substrate located outside an area covering the first gate electrode and the first sidewall; and
a stress-applying insulating film covering the first gate electrode and the first sidewalls.
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Abstract
A gate insulating film and a gate electrode are formed on an active region of a semiconductor substrate. A sidewall forming an L shape in cross section is formed on the sides of the gate electrode. Source/drain regions are formed in regions of the semiconductor substrate located outside an area covering the gate electrode and the sidewall. A stress-applying stress liner film is formed to cover the gate electrode and the sidewall.
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Citations
22 Claims
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1. A semiconductor device having a MIS transistor, said MIS transistor comprising:
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a first gate insulating film formed on a semiconductor substrate;
a first gate electrode formed on the first gate insulating film;
a first sidewall covering the sides of the first gate electrode and the top surface of part of the semiconductor substrate and made of an insulating film forming an L shape in cross section;
first source/drain regions formed in regions of the semiconductor substrate located outside an area covering the first gate electrode and the first sidewall; and
a stress-applying insulating film covering the first gate electrode and the first sidewalls. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for fabricating a semiconductor device including a MIS transistor having a first gate insulating film and a first gate electrode, said method comprising the steps of:
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(a) forming a first insulating film covering the top surface of the first gate electrode and the top surface of a semiconductor substrate and a second insulating film covering the first insulating film;
(b) subjecting the first and second insulating films to anisotropic etching, thereby forming, on the sides of the first gate electrode, a first sidewall formed of part of the first insulating film and a second sidewall formed of part of the second insulating film;
(c) implanting ions into the semiconductor substrate using the first gate electrode, the first sidewalls and the second sidewalls as masks, thereby forming first source/drain regions in the semiconductor substrate;
(d) after the step (c), selectively removing the second sidewall; and
(e) after the step (d), forming a stress-applying insulating film to cover the first sidewall. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification