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Semiconductor device and method for fabricating the same

  • US 20070096184A1
  • Filed: 10/11/2006
  • Published: 05/03/2007
  • Est. Priority Date: 10/27/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device having a MIS transistor, said MIS transistor comprising:

  • a first gate insulating film formed on a semiconductor substrate;

    a first gate electrode formed on the first gate insulating film;

    a first sidewall covering the sides of the first gate electrode and the top surface of part of the semiconductor substrate and made of an insulating film forming an L shape in cross section;

    first source/drain regions formed in regions of the semiconductor substrate located outside an area covering the first gate electrode and the first sidewall; and

    a stress-applying insulating film covering the first gate electrode and the first sidewalls.

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