Single mask scheme method and structure for integrating PMOS and NMOS transistors using strained silicon
First Claim
1. A method for forming a semiconductor integrated circuit device comprising:
- providing a semiconductor substrate including a first well region and a second well region;
forming a dielectric layer overlying the semiconductor substrate including the first well region and the second well region;
forming a polysilicon gate layer overlying the dielectric layer, the polysilcon gate layer being overlying a first channel region in the first well region and a second channel region in the second well region in the semiconductor substrate;
forming a hard mask overlying the polysilicon gate layer;
patterning the polysilicon gate layer, including the hard mask layer, to form a first gate structure including first edges in the first well region and a second gate structure including second edges in the second well region;
forming a liner layer overlying the first gate structure and the second gate structure and overlying first source/drain regions in the first well region and second source/drain regions in the second well region;
forming a spacer dielectric layer overlying the liner layer;
patterning the spacer dielectric layer to form first sidewall spacer structures on the first gate structure, including the first edges and to form the second sidewall spacer structures on the second gate structure, including the second edges, while using a portion of the liner layer as a stop layer;
maintaining the liner layer overlying the first source/drain regions and second source/drain regions during at least the patterning of the spacer dielectric layer;
protecting the second well region including the second gate structure using a masking layer;
etching a first source region and a first drain region adjacent to the first gate structure using the hard mask layer and the first sidewall spacers as a protective layer;
depositing a silicon germanium fill material into the first source region and the first drain region to fill the etched first source region and the etched first drain region while causing the first channel region between the first source region and the first drain region to be strained in compressive mode from at least the silicon germanium material formed in the first source region and the first drain region.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for forming a CMOS integrated circuit using strained silicon technology. The method forms a liner layer overlying the first gate structure and the second gate structure and overlying first source/drain regions in the first well region and second source/drain regions in the second well region. In a preferred embodiment, the method patterns A spacer dielectric layer to form first sidewall spacer structures on the first gate structure, including the first edges and to form the second sidewall spacer structures on the second gate structure, including the second edges, while using a portion of the liner layer as a stop layer. The method maintains the liner layer overlying the first source/drain regions and second source/drain regions during at least the patterning of the spacer dielectric layer according to a preferred embodiment. The method also etches a first source region and a first drain region adjacent to the first gate structure using the hard mask layer and the first sidewall spacers as a protective layer. The method deposits a silicon germanium fill material into the first source region and the first drain region to fill the etched first source region and the etched first drain region while causing the first channel region between the first source region and the first drain region to be strained in compressive mode from at least the silicon germanium material formed in the first source region and the first drain region.
24 Citations
20 Claims
-
1. A method for forming a semiconductor integrated circuit device comprising:
-
providing a semiconductor substrate including a first well region and a second well region;
forming a dielectric layer overlying the semiconductor substrate including the first well region and the second well region;
forming a polysilicon gate layer overlying the dielectric layer, the polysilcon gate layer being overlying a first channel region in the first well region and a second channel region in the second well region in the semiconductor substrate;
forming a hard mask overlying the polysilicon gate layer;
patterning the polysilicon gate layer, including the hard mask layer, to form a first gate structure including first edges in the first well region and a second gate structure including second edges in the second well region;
forming a liner layer overlying the first gate structure and the second gate structure and overlying first source/drain regions in the first well region and second source/drain regions in the second well region;
forming a spacer dielectric layer overlying the liner layer;
patterning the spacer dielectric layer to form first sidewall spacer structures on the first gate structure, including the first edges and to form the second sidewall spacer structures on the second gate structure, including the second edges, while using a portion of the liner layer as a stop layer;
maintaining the liner layer overlying the first source/drain regions and second source/drain regions during at least the patterning of the spacer dielectric layer;
protecting the second well region including the second gate structure using a masking layer;
etching a first source region and a first drain region adjacent to the first gate structure using the hard mask layer and the first sidewall spacers as a protective layer;
depositing a silicon germanium fill material into the first source region and the first drain region to fill the etched first source region and the etched first drain region while causing the first channel region between the first source region and the first drain region to be strained in compressive mode from at least the silicon germanium material formed in the first source region and the first drain region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A method for forming a semiconductor integrated circuit device comprising:
-
providing a semiconductor substrate including a first well region and a second well region;
forming a dielectric layer overlying the semiconductor substrate including the first well region and the second well region;
forming a polysilicon gate layer overlying the dielectric layer, the polysilcon gate layer being overlying a first channel region in the first well region and a second channel region in the second well region in the semiconductor substrate;
forming a hard mask overlying the polysilicon gate layer;
patterning the polysilicon gate layer, including the hard mask layer, to form a first gate structure including first edges in the first well region and a second gate structure including second edges in the second well region;
forming a liner layer overlying the first gate structure and the second gate structure and overlying first source/drain regions in the first well region and second source/drain regions in the second well region;
forming a spacer dielectric layer overlying the liner layer;
patterning the spacer dielectric layer to form first sidewall spacer structures on the first gate structure, including the first edges and to form the second sidewall spacer structures on the second gate structure, including the second edges, while using a portion of the liner layer as a stop layer;
maintaining the liner layer overlying the first source/drain regions and second source/drain regions during at least the patterning of the spacer dielectric layer;
protecting the second well region including the second gate structure using a masking layer overlying the second well region;
etching a first source region and a first drain region adjacent to the first gate structure using the hard mask layer and the first sidewall spacers as a protective layer;
stripping the masking layer overlying the second well region while exposing a portion of the liner layer overlying the second well region;
selectively depositing a silicon germanium fill material into the first source region and the first drain region to fill the etched first source region and the etched first drain region while using the portion of the liner layer overlying the second well region as a masking material; and
causing the first channel region between the first source region and the first drain region to be strained in compressive mode from at least the silicon germanium material formed in the first source region and the first drain region. - View Dependent Claims (17, 18, 19, 20)
-
Specification