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Semiconductor device and a method for manufacturing the same

  • US 20070096224A1
  • Filed: 12/07/2006
  • Published: 05/03/2007
  • Est. Priority Date: 10/01/1993
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a pixel portion comprising a first thin film transistor; and

    a driver circuit comprising a second thin film transistor, wherein each of the first thin film transistor and the second thin film transistor comprising;

    a silicon island over a substrate having an insulating surface, said silicon island comprising a source, a drain, and a channel located between said source and said drain;

    a gate electrode provided adjacent to the channel with a gate insulating layer interposed therebetween;

    an impurity region having a lower concentration of the impurity than concentrations of the source and the drain provided between the channel and at least one of the source and the drain;

    a layer comprising silicon nitride over the gate electrode and the silicon island, said layer having a portion in contact with the gate insulating layer;

    wherein the gate insulating layer has a first portion over the channel and a second portion over the impurity region and a thickness of the second portion is thinner than a thickness of the first portion, and wherein the first thin film transistor has a pixel electrode electrically connected to one of the source and the drain.

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