CMOS image sensor and method for manufacturing the same

• US 20070096232A1
• Filed: 09/26/2006
• Published: 05/03/2007
• Est. Priority Date: 09/28/2005
• Status: Active Grant

• Current Assignee: MOSAID Technologies Inc. (f/k/a Conversant Intellectual Property Management)
• Original Assignee: DONGBU ELECTRONICS CO., LTD. (DB HiTek Co., Ltd.)
• Inventors: Hwang, Joon
• Granted Patent: US 7,488,616 B2
• Time in Patent Office: Days
• US Class Current: 257/431
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

A CIS and a method for manufacturing the same are provided. The CIS includes an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon; a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other; a metal sidewall formed to fill the predetermined interval between the plurality of the color filters; and a microlens formed on each of the plurality of color filters.

Claims

1. A CIS (complementary metal oxide silicon image sensor) comprising:

an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon;

a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other;

a metal sidewall formed to fill the predetermined interval between the plurality of the color filters; and

a microlens formed on each of the plurality of color filters.

2. The CIS according to claim 1, wherein the plurality of color filters comprise a red color filter, a green color filter, and a blue color filter.

3. The CIS according to claim 2, wherein the metal sidewall is formed on both side surfaces of the green color filter.

4. The CIS according to claim 1, wherein the metal sidewall is formed of an opaque metal.

5. The CIS according to claim 4, wherein the opaque metal is one selected from the group consisting of Al, Cr, Mo, and Ti.

6. The CIS according to claim 1, further comprising a planarization layer on an entire upper surface of the substrate including the plurality of color filters.

7. A CIS (complementary metal oxide silicon image sensor) comprising:

an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon;

a first color filter formed on the interlayer insulation layer;

metal sidewalls formed on both side surfaces of the first color filter;

a second color filter formed at one side of the first color filter with the metal sidewall interposed between the first color filter and the second color filter;

a third color filter formed on another side of the first color filter with the metal sidewall interposed between the first color filter and the third color filter; and

microlenses formed on the first, second, and third color filters.

8. The CIS according to claim 7, wherein the first color filter is a green color filter.

9. A method for manufacturing a CIS (complementary metal oxide silicon image sensor), the method comprising:

forming an interlayer insulation layer on a substrate having a photodiode and a transistor;

forming a first color filter on the interlayer insulation layer;

forming metal sidewalls on both sides of the first color filter;

forming a second color filter on one side of the first color filter with the metal sidewall interposed between the first color filter and the second color filter;

forming a third color filter on another side of the first color filter with the metal sidewall interposed between the first color filter and the third color filter; and

forming a microlens on each of the first, second and third color filters.

10. The method according to claim 9, wherein forming a first color filter comprises:

applying a green photosensitive material on the interlayer insulation layer, and

selectively patterning the green photosensitive material.

11. The method according to claim 9, wherein the metal sidewall is formed of an opaque metal.

12. The method according to claim 11, wherein the opaque metal is one selected from the group consisting of Al, Cr, Mo, and Ti.

13. The method according to claim 9, wherein forming metal sidewalls comprises:

depositing a metal layer to a thickness of 500 to 2000 Å

; and

performing a blanket etch process on the metal layer.

14. The method according to claim 9, further comprising forming a planarization layer on an entire surface of the substrate including the first, second, and third color filters.

15. The method according to claim 9, further comprising hardening the microlenses.

16. A method for manufacturing a CIS (complementary metal oxide silicon image sensor), the method comprising:

forming an interlayer insulation layer on a substrate having a photodiode and a transistor;

forming green, red, and blue color filters on the interlayer insulation layer, the green, red, and blue color filters being spaced a predetermined interval apart from each other;

forming metal sidewalls on the sides of each of the green, red, and blue color filters; and

forming a microlens on each of the green, red, and blue color filters.

17. The method according to claim 16, wherein forming metal sidewalls comprises:

forming a metal layer on an entire surface of the substrate to fill the predetermined intervals between the green, red, and blue color filters; and

planarizing the metal layer to expose the green, red and blue color filters.

18. The method according to claim 17, wherein planarizing the metal layer comprises performing a CMP (chemical mechanical processing) on the metal layer.

19. The method according to claim 17, wherein planarizing the metal layer comprises performing a blanket etch process on the metal layer.

20. The method according to claim 16, wherein the metal sidewall is formed of a metal selected from the group consisting of Al, Cr, Mo, and Ti.