CMOS image sensor and method for manufacturing the same
First Claim
Patent Images
1. A CIS (complementary metal oxide silicon image sensor) comprising:
- an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon;
a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other;
a metal sidewall formed to fill the predetermined interval between the plurality of the color filters; and
a microlens formed on each of the plurality of color filters.
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Abstract
A CIS and a method for manufacturing the same are provided. The CIS includes an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon; a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other; a metal sidewall formed to fill the predetermined interval between the plurality of the color filters; and a microlens formed on each of the plurality of color filters.
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Citations
20 Claims
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1. A CIS (complementary metal oxide silicon image sensor) comprising:
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an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon;
a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other;
a metal sidewall formed to fill the predetermined interval between the plurality of the color filters; and
a microlens formed on each of the plurality of color filters. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A CIS (complementary metal oxide silicon image sensor) comprising:
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an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon;
a first color filter formed on the interlayer insulation layer;
metal sidewalls formed on both side surfaces of the first color filter;
a second color filter formed at one side of the first color filter with the metal sidewall interposed between the first color filter and the second color filter;
a third color filter formed on another side of the first color filter with the metal sidewall interposed between the first color filter and the third color filter; and
microlenses formed on the first, second, and third color filters. - View Dependent Claims (8)
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9. A method for manufacturing a CIS (complementary metal oxide silicon image sensor), the method comprising:
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forming an interlayer insulation layer on a substrate having a photodiode and a transistor;
forming a first color filter on the interlayer insulation layer;
forming metal sidewalls on both sides of the first color filter;
forming a second color filter on one side of the first color filter with the metal sidewall interposed between the first color filter and the second color filter;
forming a third color filter on another side of the first color filter with the metal sidewall interposed between the first color filter and the third color filter; and
forming a microlens on each of the first, second and third color filters. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for manufacturing a CIS (complementary metal oxide silicon image sensor), the method comprising:
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forming an interlayer insulation layer on a substrate having a photodiode and a transistor;
forming green, red, and blue color filters on the interlayer insulation layer, the green, red, and blue color filters being spaced a predetermined interval apart from each other;
forming metal sidewalls on the sides of each of the green, red, and blue color filters; and
forming a microlens on each of the green, red, and blue color filters. - View Dependent Claims (17, 18, 19, 20)
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Specification