ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME

• US 20070096636A1
• Filed: 09/26/2006
• Published: 05/03/2007
• Est. Priority Date: 10/28/2005
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Shin, Kyoung-Ju, Park, Seung-Kyu, Huh, Jong-Moo, Kim, Nam-Deog
• Granted Patent: US 7,990,047 B2
• Time in Patent Office: Days
• US Class Current: 313/503
• CPC Class Codes: H10K 50/805 Electrodes
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/805 Electrodes
• CPC Class Codes: H10K 59/8792 comprising light absorbing layers, e.g. black layers
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

A method of manufacturing an organic light emitting diode display includes forming a plurality of signal lines and a plurality of TFTs on a substrate, forming a passivation layer on the signal lines and the TFTs, forming a photosensitive layer having a plurality of openings on the passivation layer, etching the passivation layer using the photosensitive layer as a mask, forming a first electrode by depositing and etching a conductive layer on substantially the entire surface including the photosensitive layer, forming a light emitting member in portions of the openings, and forming a second electrode on the light emitting member and the photosensitive layer.

Claims

1. An organic light emitting diode display comprising:

a substrate;

a first signal line formed on the substrate;

a second signal line intersecting the first signal line;

a plurality of thin film transistors formed on the substrate and electrically connected to the first and second signal lines;

a passivation layer formed on the thin film transistors;

a photosensitive layer formed on the passivation layer and has a first opening;

a first electrode connected to one of the thin film transistors and separated from the photosensitive layer;

a light emitting member is formed on the first electrode and is defined by the photosensitive layer; and

a second electrode formed on the light emitting member.

2. The organic light emitting diode display of claim 1, wherein the first electrode has an area smaller than that of the first opening.

3. The organic light emitting diode display of claim 1, wherein a boundary of the first electrode is disposed in the first opening and contacts the light emitting member.

4. The organic light emitting diode display of claim 3,

wherein the first electrode is disposed inside the first opening and is separated from the photosensitive layer by about 1 μ

m to about 5 μ

m.

5. The organic light emitting diode display of claim 1, wherein one of the thin film transistors and the first electrode have side contact.

6. The organic light emitting diode display of claim 5, wherein the first electrode contacts the substrate.

7. The organic light emitting diode display of claim 6, wherein at least a portion of the light emitting member overlaps the thin film transistors.

8. The organic light emitting diode display of claim 1, wherein the passivation layer is removed from the first opening.

9. The organic light emitting diode display of claim 1, wherein portions of the photosensitive layer surrounding the first opening are used as partition walls.

10. The organic light emitting diode display of claim 1, wherein the photosensitive layer further comprises a second opening, and wherein the light emitting diode display further comprises a connecting member connecting a plurality of thin film transistors, the connecting member being formed in the second opening and separated from the photosensitive layer.

11. The organic light emitting diode display of claim 10, further comprising a first insulating member on the connecting member.

12. The organic light emitting diode display of claim 10, wherein the passivation layer is removed from the second opening.

13. The organic light emitting diode display of claim 10, wherein the connecting member contacts the substrate.

14. The organic light emitting diode display of claim 1, wherein the passivation layer and the photosensitive layer comprise a single-layered organic layer.

15. The organic light emitting diode display of claim 14, wherein the single-layered organic layer comprises a photo-curable material.

16. The organic light emitting diode display of claim 1, further comprising a second insulating member formed in the first opening and having a thickness which differs from that of the first opening.

17. The organic light emitting diode display of claim 16, wherein the second insulating member comprises the same material as that of the photosensitive layer.

18. The organic light emitting diode display of claim 16, wherein the second insulating member comprises at least one of a concave and a convex portion.

19. An organic light emitting diode display comprising:

a substrate;

a first signal line formed on the substrate;

a second signal line intersecting the first signal line;

a plurality of thin film transistors formed on the substrate and electrically connected to the first and second signal lines;

an insulating layer formed on the thin film transistors and comprising a first portion and a second portion thinner than the first portion, the second portion having at least one of a concave and convex portion;

a first electrode formed on the insulating layer;

a light emitting member formed on the first electrode; and

a second electrode formed on the light emitting member.

20. The organic light emitting diode display of claim 19,

wherein the insulating layer further comprises a third portion thinner than the first portion, and the third portion is formed on an end portion of at least one of the first and second signal lines.

21. The organic light emitting diode display of claim 19, wherein the first portion of the insulating layer has an opening, and a connecting member is formed in the opening, wherein the connecting member is separated from the insulating layer and connects a plurality of the thin film transistors.

22. A method of manufacturing an organic light emitting diode display comprising:

forming a plurality of signal lines and a plurality of thin film transistors on a substrate;

forming a passivation layer on the signal lines and the thin film transistors;

forming a photosensitive layer having a plurality of openings on the passivation layer;

etching the passivation layer using the photosensitive layer as a mask;

forming a first electrode by depositing a conductive layer on substantially the entire surface including the photosensitive layer and etching the conductive layer to form the first electrode;

forming a light emitting member in portions of the openings; and

forming a second electrode on the light emitting member and the photosensitive layer.

23. The method of claim 22, wherein in the etching of the passivation layer, portions of the thin film transistors are exposed.

24. The method of claim 22, further comprising forming an insulating member in the portions of the openings after the formation of the first electrode.

25. The method of claim 24, wherein a shadow mask is used in the formation of the insulating member.

26. The method of claim 22, wherein in the formation of the first electrode, the first electrode is formed to be spaced apart from the photosensitive layer.

27. The method of claim 22, further comprising curing the photosensitive layer after the etching of the passivation layer.

28. The method of claim 22, wherein in the formation of the passivation layer and forming the photosensitive layer, the passivation layer and the photosensitive layer are formed to constitute a single-layered organic layer.

29. The method of claim 22, wherein in the etching of the passivation layer, portions of the photosensitive layer are subject to a slit-process developing.

30. The method of claim 22, wherein in the formation of the photosensitive layer, the photosensitive layer is patterned to have a first portion and a second portion thinner than the first portion, the second portion having at least one of a concave and a convex portion.

31. The method of claim 30, wherein in a slit mask is used in the formation of the photosensitive layer.

32. The method of claim 30, wherein the formation of the photosensitive layer further comprises forming a third portion in which the photosensitive layer is removed, and the method of manufacturing an organic light emitting diode display further comprises the formation of an insulating member in the third portion after the formation of the first electrode.

33. A method of manufacturing an organic light emitting diode display comprising:

forming a plurality of signal lines and a plurality of thin film transistors on a substrate;

forming an organic insulating layer on the signal lines and the thin film transistors;

forming openings which expose portions of the thin film transistors by removing portions of the organic insulating layer;

forming a first electrode by depositing a conductive layer on substantially the entire surface including the organic insulating layer and etching the conductive layer to form the first electrode;

forming a light emitting member on portions of the openings; and

forming a second electrode on the light emitting member and the organic insulating layer.

34. The method of claim 33, further comprising forming an insulating member in the portions of the openings after the formation of the first electrode.

35. The method of claim 34, wherein a shadow mask is used in the formation of the insulating member.

36. The method of claim 33, wherein in the formation of the first electrode, the first electrode is formed apart from the organic insulating layer.

37. An organic light emitting diode display comprising:

a substrate;

a first signal line formed on the substrate;

a second signal line intersecting the first signal line;

a plurality of thin film transistors formed on the substrate and electrically connected to the first and second signal lines;

a passivation layer formed on the thin film transistors;

partition walls formed on the passivation layer and having a first opening;

a first electrode contacting at least portion of the substrate in the first opening;

a light emitting member formed on the first electrode and defined by the partition walls; and

a second electrode formed on the light emitting member.

38. The organic light emitting diode display of claim 37, wherein the first electrode has an area which is smaller than that of the first opening.

39. The organic light emitting diode display of claim 38, wherein the first electrode is disposed inside the first opening and is separated from the partition walls by about 1 μ

m to about 5 μ

m.

40. The organic light emitting diode display of claim 37, wherein one of the thin film transistors and the first electrode have side contact.

41. The organic light emitting diode display of claim 37, wherein the passivation layer is removed from the first opening.

42. The organic light emitting diode display of claim 37, wherein the partition walls have a second opening, and the light emitting diode display further comprises a connecting member formed in the second opening which contacts the substrate and connects a plurality of the thin film transistors.

43. The organic light emitting diode display of claim 42, further comprising an insulating member on the connecting member.

44. An organic light emitting diode display comprising:

a substrate;

a first signal line formed on the substrate;

a second signal line intersecting the first signal line;

a switching thin film transistor formed on the substrate and connected to the first and second signal lines;

a driving thin film transistor connected to the switching thin film transistor;

a driving voltage line connected to the driving thin film transistor;

a passivation layer formed on substantially the entire surface of the substrate;

a photosensitive layer formed on the passivation layer and having a first opening;

a first electrode connected to the driving thin film transistor and separated from the photosensitive layer;

a light emitting member formed on the first electrode and defined by the photosensitive layer; and

a second electrode formed on the light emitting member.