Dual mode power amplifier

• US 20070096810A1
• Filed: 10/25/2005
• Published: 05/03/2007
• Est. Priority Date: 10/25/2005
• Status: Active Grant

• Current Assignee: Skyworks Solutions Incorporated
• Original Assignee: Skyworks Solutions Incorporated
• Inventors: Ripley, David, Hageman, Michael, Brandt, Dale
• Granted Patent: US 7,482,868 B2
• Time in Patent Office: Days
• US Class Current: 330/133
• CPC Class Codes: H03F 1/0277 Selecting one or more amplifiers from a plurality of amplifiers
• CPC Class Codes: H03F 2200/222 A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2203/7206 the gated amplifier being switched on or off by a switch in the bias circuit of the amplifier controlling a bias voltage in the amplifier
• CPC Class Codes: H03F 2203/7239 the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)
• CPC Class Codes: H03F 3/211 using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/72 Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
• CPC Class Codes: H03G 3/3042 in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04

Abstract

A power amplifier is configured to operate in a first gain mode and a second gain mode. A first power amplifier input stage has an input and an output. A second power amplifier input stage has an input and an output, where the output of the second power amplifier input stage is coupled to the output of the first power amplifier input stage. The first input stage is turned on in response to a first bias voltage in the first gain mode and the second input stage is turned on in response to a second bias voltage in the second gain mode. Alternatively, a first input stage and an intermediate stage can be switched off by turning off their respective bias voltages, and a second input stage can be switched on by turning on its respective bias voltage; the intermediate stage and the second input stage sharing a common output.

Claims

1. An amplification module comprising:

a power amplifier configured to operate in a first gain mode and a second gain mode;

said power amplifier comprising a first power amplifier input stage, said first power amplifier input stage having an input and an output;

said power amplifier further comprising a second power amplifier input stage, said second power amplifier input stage having an input and an output, said output of said second power amplifier input stage being coupled to said output of said first power amplifier input stage;

wherein said first power amplifier input stage is activated in response to a first bias voltage in said first gain mode and said second power amplifier input stage is activated in response to a second bias voltage in said second gain mode.

2. The amplification module of claim 1 wherein said first power amplifier input stage has a first gain and said second power amplifier input stage has a second gain, wherein said second gain is greater than said first gain.

3. The amplification module of claim 1 wherein said first power amplifier input stage has a first gain and said second power amplifier input stage has a second gain, wherein said first gain is equal to said second gain.

4. The amplification module of claim 1 wherein said output of said first power amplifier input stage is directly connected to said output of said second power amplifier input stage.

5. The amplification module of claim 1 wherein said input of said first power amplifier input stage is coupled to said input of said second power amplifier input stage.

6. The amplification module of claim 1 wherein said input of said first power amplifier input stage is directly connected to said input of said second power amplifier input stage.

7. The amplification module of claim 1 wherein said power amplifier is further configured to a receive a first RF input signal in said first gain mode and a second RF input signal in said second gain mode and provide an RF output signal, wherein said first RF input signal is coupled to said input of said first power amplifier input stage and said second RF input signal is coupled to said input of said second power amplifier input stage.

8. The amplification module of claim 1 wherein said power amplifier is further configured to operate as a linear power amplifier in said first gain mode and to operate as a saturated power amplifier in said second gain mode.

9. The amplification module of claim 1 wherein said power amplifier is further configured to operate as a linear power amplifier in said first gain mode and to operate as a linear power amplifier in said second gain mode.

10. The amplification module of claim 1 wherein said power amplifier is further configured to operate as a saturated power amplifier in said first gain mode and to operate as a saturated power amplifier in said second gain mode.

11. The amplification module of claim 7 wherein said first RF input signal comprises EDGE modulation and said second RF input signal comprises GMSK modulation.

12. The amplification module of claim 1 wherein said power amplifier is fabricated on a single semiconductor die.

13. A power amplifier configured to operate in first and second gain modes, said power amplifier comprising:

a first input stage being selectively turned on and turned off by a first bias voltage;

a second input stage being selectively turned on and turned off by a second bias voltage;

an intermediate stage driven by said first input stage, said intermediate stage being selectively turned on and turned off by a third bias voltage;

said intermediate stage and said second input stage sharing a common output;

wherein said first input stage and said intermediate stage are turned on and said second input stage is turned off in said first gain mode;

wherein said first input stage and said intermediate stage are turned off and said second input stage is turned on in said second gain mode.

14. The power amplifier of claim 13 wherein a gain of said power amplifier is greater in said first gain mode than in said second gain mode.

15. The power amplifier of claim 13 wherein a gain of said power amplifier in said first gain mode is equal to said gain of said power amplifier in said second gain mode.

16. The power amplifier of claim 13 wherein said common output is made by a direct connection between an output of said second input stage and an output of said intermediate stage.

17. The power amplifier of claim 13 wherein an input of said first input stage is coupled to an input of said second input stage.

18. The power amplifier of claim 13 wherein an input of said first input stage is directly connected to an input of said second input stage.

19. The power amplifier of claim 13 being further configured to a receive a first RF signal in said first gain mode and a second RF signal in said second gain mode, wherein said first RF signal is coupled to an input of said first input stage and said second RF signal is coupled to an input of said input stage.

20. The power amplifier of claim 13 being further configured to operate as a saturated power amplifier in said first gain mode and to operate as a linear power amplifier in said second gain mode.

21. The power amplifier of claim 13 being further configured to operate as a linear power amplifier in said first gain mode and to operate as a linear power amplifier in said second gain mode.

22. The power amplifier of claim 13 being further configured to operate as a saturated power amplifier in said first gain mode and to operate as a saturated power amplifier in said second gain mode.

23. The power amplifier of claim 19 wherein said first RF signal comprises EDGE modulation and said second RF signal comprises GMSK modulation.

24. The power amplifier of claim 13 wherein said power amplifier is fabricated on a single semiconductor die.