Bias circuit for BJT amplifier
First Claim
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1. A radio frequency (RF) amplifier circuit having an input terminal for receiving an RF input signal, comprising:
- an RF power-amplifying transistor having a base coupled to the input terminal; and
a bias circuit coupled to the input terminal and to the RF power-amplifying transistor, the bias circuit including a bypass capacitor and a PN junction diode having first and second terminals, the first terminal being coupled to the base of the RF amplifying transistor through at least one impedance element, the second terminal is coupled to an RF ground in the RF amplifier circuit through the bypass capacitor.
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Abstract
The embodiments of the present invention include a bias circuit for a power-amplifying device, which receives and amplifies an input RF signal having a series of RF cycles within a modulation envelop. The bias circuit compensates odd-order distortion processes by detecting the power in the input signal and providing a dynamic adjustment to a bias stimulus for the power-amplifying device within a time scale of the modulation envelope.
36 Citations
20 Claims
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1. A radio frequency (RF) amplifier circuit having an input terminal for receiving an RF input signal, comprising:
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an RF power-amplifying transistor having a base coupled to the input terminal; and
a bias circuit coupled to the input terminal and to the RF power-amplifying transistor, the bias circuit including a bypass capacitor and a PN junction diode having first and second terminals, the first terminal being coupled to the base of the RF amplifying transistor through at least one impedance element, the second terminal is coupled to an RF ground in the RF amplifier circuit through the bypass capacitor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A radio frequency (RF) amplifier circuit having an input terminal for receiving an RF input signal, comprising:
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a array of n rows by m columns of RF amplifying transistor cells each having a base coupled to the input terminal;
a row of n PN junction diodes each having first and second terminals, the first terminal being coupled to the base of each of a respective column of RF amplifying transistor cells through at least one impedance element, and the second terminal being coupled to an RF ground of the amplifier circuit through a respective one of a row of n bypass capacitors. - View Dependent Claims (14, 15, 16, 17)
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18. An RF amplifier circuit, comprising:
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an amplifier branch including an RF power-amplifying transistor and a PN junction diode, the PN junction diode having a first terminal coupled to a base of the RF power-amplifying transistor through at least one impedance element and a second terminal coupled to an RF ground through a bypass capacitor; and
and a reference branch including at least one transistor or level-shifting diode coupled between a reference voltage terminal for connecting to a reference voltage supply and a circuit ground; and
wherein the reference branch and the amplifier branch form a current mirror. - View Dependent Claims (19, 20)
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Specification