Deposition of enhanced seed layer using tantalum alloy based sputter target
First Claim
1. A magnetic recording medium, comprising:
- a substrate;
a seedlayer deposited over said substrate, said seedlayer comprised of tantalum (Ta) and an alloying element;
an underlayer deposited over said seedlayer; and
a magnetic data-storing granular layer deposited over said underlayer, wherein solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, and wherein the alloying element has a mass susceptibility of less than or equal to
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Abstract
A seedlayer for a magnetic recording medium, the seedlayer formed over a substrate from a sputter target comprised of tantalum (Ta) and an alloying element. The solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, and the alloying element has a mass susceptibility of less than or equal to
where possible alloying elements include (but are not limited to) boron (B), carbon (C), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), manganese (Mn), chromium (Cr), zirconium (Zr), niobium (Nb), molybdenum (Mo), ytterbium (Yb), lutetium (Lu), hafnium (Hf), bismuth (Bi), and tungsten (W). Alternatively, the alloying element is soluble in tantalum (Ta) at room temperature or at elevated temperatures, has a mass susceptibility of less than or equal to
and has an atomic radius smaller than 1.47 Å, where possible alloying elements include (but are not limited to) boron (B), carbon (C), aluminum (Al), silicon (Si), chromium (Cr), ruthenium (Ru), rhodium (Rh), rhenium (Re), iridium (Ir) and platinum (Pt). Further alternatively, the solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, and the alloying element has a mass susceptibility of less than or equal to
48 Citations
31 Claims
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1. A magnetic recording medium, comprising:
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a substrate;
a seedlayer deposited over said substrate, said seedlayer comprised of tantalum (Ta) and an alloying element;
an underlayer deposited over said seedlayer; and
a magnetic data-storing granular layer deposited over said underlayer, wherein solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, and wherein the alloying element has a mass susceptibility of less than or equal to
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2. The magnetic recording medium according to claim 2, wherein the alloying element is selected from the group consisting of boron (B), carbon (C), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), manganese (Mn), chromium (Cr), zirconium (Zr), niobium (Nb), molybdenum (Mo), ytterbium (Yb), lutetium (Lu), hafnium (Hf), bismuth (Bi), and tungsten (W).
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3. A magnetic recording medium, comprising:
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a substrate;
a seedlayer deposited over said substrate, said seedlayer comprised of tantalum (Ta) and an alloying element;
an underlayer deposited over said seedlayer; and
a magnetic data-storing granular layer deposited over said underlayer, wherein the alloying element is soluble in tantalum (Ta) at room temperature or at elevated temperatures, wherein the alloying element has a mass susceptibility of less than or equal to and wherein the alloying element has an atomic radius smaller than 1.47 Å
. - View Dependent Claims (4, 5)
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6. A magnetic recording medium, comprising:
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a substrate;
a seedlayer deposited over said substrate, said seedlayer comprised of tantalum (Ta) and an alloying element;
an underlayer deposited over said seedlayer; and
a magnetic data-storing granular layer deposited over said underlayer, wherein solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, wherein the alloying element has a mass susceptibility of less than or equal to wherein the alloying element is soluble in tantalum (Ta) at temperatures higher than room temperature, and wherein the alloying element has an atomic radius smaller than 1.47 Å
. - View Dependent Claims (7, 8)
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9. A method of manufacturing a magnetic recording medium, comprising the steps of:
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sputtering at least a first seedlayer over a substrate from a first sputter target, wherein the first sputter target is comprised of tantalum (Ta) and an alloying element, wherein solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, and wherein the alloying element has a mass susceptibility of less than or equal to sputtering at least a first underlayer over the first seedlayer from a second sputter target; and
sputtering at least a first magnetic data-storing granular layer over the first underlayer from a third sputter target. - View Dependent Claims (10, 11)
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12. A method of manufacturing a magnetic recording medium, comprising the steps of:
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sputtering at least a first seedlayer over a substrate from a first sputter target, wherein the first sputter target is comprised of tantalum (Ta) and an alloying element, wherein the alloying element is soluble in tantalum (Ta) at room temperature or at elevated temperatures, wherein the alloying element has a mass susceptibility of less than or equal to and wherein the alloying element has an atomic radius smaller than 1.47 Å
;
sputtering at least a first underlayer over the first seedlayer from a second sputter target; and
sputtering at least a first magnetic data-storing granular layer over the first underlayer from a third sputter target. - View Dependent Claims (13, 14, 15)
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16. A method of manufacturing a magnetic recording medium, comprising the steps of:
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sputtering at least a first seedlayer over a substrate from a first sputter target, wherein the first sputter target is comprised of tantalum (Ta) and an alloying element, wherein solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, wherein the alloying element has a mass susceptibility of less than or equal to wherein the alloying element is soluble in tantalum (Ta) at temperatures higher than room temperature, and wherein the alloying element has an atomic radius smaller than 1.47 Å
;
sputtering at least a first underlayer over the first seedlayer from a second sputter target; and
sputtering at least a first magnetic data-storing granular layer over the first underlayer from a third sputter target. - View Dependent Claims (17, 18, 19)
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20. A sputter target,
wherein the sputter target is comprised of tantalum (Ta) and an alloying element, wherein solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, and wherein the alloying element has a mass susceptibility of less than or equal to -
10 - 7 m 3 kg . - View Dependent Claims (21, 23)
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22. A sputter target,
wherein the sputter target is comprised of tantalum (Ta) and an alloying element, wherein the alloying element is soluble in tantalum (Ta) at room temperature or at elevated temperatures, wherein the alloying element has a mass susceptibility of less than or equal to -
10 - 7 m 3 kg , and wherein the alloying element has an atomic radius smaller than 1.47 Å
.
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24. A sputter target,
wherein the sputter target is comprised of tantalum (Ta) and an alloying element, wherein solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, wherein the alloying element has a mass susceptibility of less than or equal to -
10 - 7 m 3 kg , wherein the alloying element is soluble in tantalum (Ta) at temperatures higher than room temperature, and wherein the alloying element has an atomic radius smaller than 1.47 Å
. - View Dependent Claims (25)
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26. A sputter target for triatron configuration sputtering, the sputter target comprising:
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a first region comprised of tantalum (Ta); and
a second region comprised of an alloying element, wherein solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, and wherein the alloying element has a mass susceptibility of less than or equal to - View Dependent Claims (27)
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28. A sputter target for triatron configuration sputtering, the sputter target comprising:
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a first region comprised of tantalum (Ta); and
a second region comprised of an alloying element, wherein the alloying element is soluble in tantalum (Ta) at room temperature or at elevated temperatures, wherein the alloying element has a mass susceptibility of less than or equal to and wherein the alloying element has an atomic radius smaller than 1.47 Å
. - View Dependent Claims (29)
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30. A sputter target for triatron configuration sputtering, the sputter target comprising:
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a first region comprised of tantalum (Ta); and
a second region comprised of an alloying element, wherein solubility of the alloying element in a body centered cubic tantalum (Ta) phase does not exceed 10 atomic percent at room temperature, wherein the alloying element has a mass susceptibility of less than or equal to wherein the alloying element is soluble in tantalum (Ta) at temperatures higher than room temperature, and wherein the alloying element has an atomic radius smaller than 1.47 Å
. - View Dependent Claims (31)
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Specification