Method for manufacturing gallium nitride compound semiconductor
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Abstract
An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer 2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate 1 is exposed).
26 Citations
48 Claims
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1-3. -3. (canceled)
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4. A method of fabricating a gallium nitride semiconductor layer comprising the steps of:
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etching an underlying gallium nitride layer on a sapphire substrate to selectively expose the sapphire substrate and define at least one post and at least one trench in the underlying gallium nitride layer, the at least one post each including a gallium nitride top and a gallium nitride sidewall, the at least one trench including a sapphire floor; and
laterally growing the gallium nitride sidewall of the at least one post into the at least one trench at about 1100°
C. while exposing the sapphire floor to thereby form a gallium nitride semiconductor layer. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 20, 36, 38)
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14. A method of fabricating a gallium nitride semiconductor layer comprising the steps of:
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etching an underlying gallium nitride layer on a sapphire substrate to selectively expose the sapphire substrate and define at least one post and at least one trench in the underlying gallium nitride layer, the at least one post each including a gallium nitride top and a gallium nitride sidewall, the at least one trench including a sapphire floor; and
laterally growing the gallium nitride sidewall of the at least one post into the at least one trench at more than about 1100°
C., while exposing the sapphire floor to thereby form a gallium nitride semiconductor layer. - View Dependent Claims (15, 16, 17, 18, 19, 21, 22, 23, 24, 39, 40)
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25. A method of fabricating a gallium nitride semiconductor layer comprising the steps of:
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etching an underlying gallium nitride layer on a sapphire substrate to define at least one post and at least one trench in the underlying gallium nitride layer, the at least one post each including a gallium nitride top and a gallium nitride sidewall; and
laterally growing the gallium nitride sidewall of the at least one post into the at least one trench at more than 1100°
C. while exposing the gallium nitride top to thereby form a gallium nitride semiconductor layer. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 42, 43)
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37. A method of fabricating a gallium nitride semiconductor layer comprising the steps of:
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etching an underlying gallium nitride layer on a sapphire substrate to selectively expose the sapphire substrate and define at least one post and at least one trench in the underlying gallium nitride layer, the at least one post each including a gallium nitride top and a gallium nitride sidewall, the at least one trench including a sapphire floor; and
laterally growing the gallium nitride sidewall of the at least one post into the at least one trench, while exposing the sapphire floor to thereby form a gallium nitride semiconductor layer.
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41. A method of fabricating a gallium nitride semiconductor layer comprising the steps of:
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etching an underlying gallium nitride layer on a sapphire substrate to define at least one post and at least one trench in the underlying gallium nitride layer, the at least one post each including a gallium nitride top and a gallium nitride sidewall; and
laterally growing the gallium nitride sidewall of the at least one post into the at least one trench while exposing the gallium nitride top to thereby form a gallium nitride semiconductor layer.
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44. A Group III nitride compound semiconductor, comprising:
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a silicon substrate;
a first group III nitride compound semiconductor layer of Alx1Ga1-x1N (0<
x1≦
1) formed on said silicon substrate into an island pattern including any of a dot pattern, a striped pattern, and a grid pattern such that substrate-exposed portions are formed in a scattered manner; and
a second semiconductor layer of GaN which causes epitaxial growth from an island or islands of said first group III nitride compound semiconductor layer serving as nuclei so that said second semiconductor layer connects adjacent ones of said first group III nitride compound semiconductor layer. - View Dependent Claims (45, 46, 47, 48)
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Specification