Process for electroless copper deposition
First Claim
1. A method for forming a copper-containing material on a substrate, comprising:
- forming a barrier layer on a substrate;
forming a ruthenium material on the barrier layer; and
exposing the substrate to an electroless copper solution containing an inhibitor source to form a copper material on the ruthenium material.
2 Assignments
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Accused Products
Abstract
Embodiments of the invention provide a method for depositing a copper material on a substrate by an electroless deposition process and also provide a composition of an electroless deposition solution. In one embodiment, the copper material is deposited from an electroless copper solution that contains an additive, such as an inhibitor, to promote a bottom-up fill process. In one aspect, the field of the substrate may be maintained free of copper material or substantially free of copper material during the electroless deposition process. Prior to the electroless deposition process for forming the copper material, a barrier layer may be deposited on the substrate, and thereafter, a ruthenium layer may be deposited thereon. In one example, the copper material is formed during a bottom-up, electroless deposition process directly on the ruthenium layer. Alternatively, a seed layer may be formed on the ruthenium layer prior to depositing the copper material.
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Citations
50 Claims
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1. A method for forming a copper-containing material on a substrate, comprising:
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forming a barrier layer on a substrate;
forming a ruthenium material on the barrier layer; and
exposing the substrate to an electroless copper solution containing an inhibitor source to form a copper material on the ruthenium material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for forming a copper-containing material on a substrate, comprising:
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depositing a ruthenium tantalum alloy on a substrate during a first deposition process; and
exposing the substrate to an electroless copper solution to form a copper material on the ruthenium tantalum alloy. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A method for forming a copper-containing material on a substrate, comprising:
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forming a barrier layer on a substrate having at least one aperture;
forming a ruthenium material on the barrier layer; and
filling the at least one aperture free or substantially free of voids and seams with a copper material during an electroless deposition process. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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46. A method for forming a copper-containing material on a substrate, comprising:
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forming a barrier layer on a substrate during a first atomic layer deposition process or a physical vapor deposition process;
forming a ruthenium layer having a thickness of about 20 Å
or less on the barrier layer during a second atomic layer deposition process; and
exposing the substrate to an electroless copper solution containing an inhibitor source to form a copper material on the ruthenium layer.
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47. A method for forming a copper-containing material on a substrate, comprising:
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depositing a ruthenium material on a barrier layer disposed on a substrate;
combining at least a copper concentrate solution and water by an in-line mixing step to form an electroless copper solution; and
exposing the substrate to the electroless copper solution to form a copper material on the ruthenium material. - View Dependent Claims (48, 49, 50)
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Specification