Plasma for patterning advanced gate stacks
First Claim
1. A dry-etch plasma composition for preserving a vertical profile of a structure comprising a stack of layers, wherein a removable water-soluble film is deposited onto the sidewalls of the stack from the plasma composition during dry-etch patterning of the stack, such that lateral attack of the patterned stack is avoided.
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Accused Products
Abstract
A plasma composition and its use in a method for the dry etching of a stack of at least one material chemically too reactive towards the use of a Cl-based plasma are provided. Small amounts of nitrogen (5% up to 10%) can be added to a BCl3 comprising plasma and used in an anisotropical dry etching method whereby a passivation film is deposited onto the vertical sidewalls of stack etched for protecting the vertical sidewalls from lateral attack such that straight profiles can be obtained.
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Citations
40 Claims
- 1. A dry-etch plasma composition for preserving a vertical profile of a structure comprising a stack of layers, wherein a removable water-soluble film is deposited onto the sidewalls of the stack from the plasma composition during dry-etch patterning of the stack, such that lateral attack of the patterned stack is avoided.
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21. An anisotropical dry etching method for patterning a stack of layers to create a vertical structure, the method comprising the steps of:
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patterning a stack of layers to create a vertical structure by dry etching using a plasma composition comprising a boron-halogen compound and nitrogen, wherein a protective and water-soluble film is deposited from the plasma onto vertical sidewalls of the structure during dry etching, such that a vertical profile of the structure is preserved and lateral attack is avoided during dry etching; and
removing the film from the structure. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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Specification