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FinFET transistor fabricated in bulk semiconducting material

  • US 20070102756A1
  • Filed: 11/10/2005
  • Published: 05/10/2007
  • Est. Priority Date: 11/10/2005
  • Status: Abandoned Application
First Claim
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1. A method for forming an electronic device, the method comprising:

  • providing a substrate;

    forming a fin on the substrate, the fin being produced in a bulk semiconducting material of the substrate, the fin having a given width;

    filling a space on either side of the fin with a non-conducting material;

    etching back an uppermost portion of the non-conducting material such that a given height of the fin is exposed above the etched-back portion of the non-conducting material;

    forming a thin oxide over the fin; and

    forming a semiconducting gate region over the thin oxide, the semiconducting gate region covering a channel, the channel being doped with a first type of majority carrier.

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