FinFET transistor fabricated in bulk semiconducting material
First Claim
Patent Images
1. A method for forming an electronic device, the method comprising:
- providing a substrate;
forming a fin on the substrate, the fin being produced in a bulk semiconducting material of the substrate, the fin having a given width;
filling a space on either side of the fin with a non-conducting material;
etching back an uppermost portion of the non-conducting material such that a given height of the fin is exposed above the etched-back portion of the non-conducting material;
forming a thin oxide over the fin; and
forming a semiconducting gate region over the thin oxide, the semiconducting gate region covering a channel, the channel being doped with a first type of majority carrier.
1 Assignment
0 Petitions
Accused Products
Abstract
A field effect transistor (FET) device structure and method for forming FETs for scaled semiconductor devices. Specifically, FinFET devices are fabricated from bulk semiconductor wafers, as opposed to silicon-on-insulator (SOI) or separation by implantation of oxygen (SIMOX) wafers, in a highly uniform and reproducible manner. The method facilitates formation of FinFET devices from readily-available bulk semiconductor substrates with improved and reproducible fin height control while providing isolation between source and drain regions of the FinFET device.
-
Citations
32 Claims
-
1. A method for forming an electronic device, the method comprising:
-
providing a substrate;
forming a fin on the substrate, the fin being produced in a bulk semiconducting material of the substrate, the fin having a given width;
filling a space on either side of the fin with a non-conducting material;
etching back an uppermost portion of the non-conducting material such that a given height of the fin is exposed above the etched-back portion of the non-conducting material;
forming a thin oxide over the fin; and
forming a semiconducting gate region over the thin oxide, the semiconducting gate region covering a channel, the channel being doped with a first type of majority carrier. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. An electronic device, comprising:
-
a fin fabricated from a bulk semiconducting material;
a gate region comprised of a semiconducting material, the gate region overlying a first portion of the fin, the first portion of the fin being doped with a majority carrier of a first type; and
a drain region formed on a second portion of the fin, the drain region being located on a first side of the gate region, the drain region being doped with a majority carrier of a second type. - View Dependent Claims (11, 12, 13)
-
-
14. An electronic device, comprising:
-
a fin on a substrate, the substrate comprising a bulk semiconducting material, the fin being fabricated by steps including;
(i) producing the fin in the bulk semiconducting material of the substrate, the fin having a given width;
(ii) filling a space on either side of the fin with a non-conducting material;
(iii) etching back an uppermost portion of the non-conducting material such that a given height of the fin is exposed above the etched-back portion of the non-conducting material; and
(iv) forming a thin oxide over the fin;
a gate region comprised of a semiconducting material, the gate region overlying a first portion of the fin, the first portion of the fin being doped with a majority carrier of a first type;
a drain region formed on a second portion of the fin, the drain region being located on a first side of the gate region, the drain region being doped with a majority carrier of a second type; and
a source region formed on a third portion of the fin, the source region being distal to the drain region and located on a second side of the gate region, the source region being doped with the majority carrier of the second type. - View Dependent Claims (15, 16, 17)
-
-
18. A method for forming an electronic device, the method comprising:
-
providing a bulk silicon substrate;
forming a fin from the silicon substrate, the fin having a given width;
forming a first dielectric layer on the silicon substrate prior to forming the fin, the first dielectric layer being comprised of a first type of dielectric material;
forming a second dielectric layer over the substrate prior to forming the fin, the second dielectric layer being comprised of a second type of dielectric material;
forming a dielectric material on sidewalls of the fin after the fin has been formed;
filling a space on either side of the fin with a non-conducting material;
etching back an uppermost portion of the non-conducting material such that a given height of the fin is exposed above the etched-back portion of the non-conducting material;
forming a thin oxide over the fin;
forming a semiconducting gate region over the thin oxide, the semiconducting gate region covering a channel, the channel being doped with a first type of majority carrier; and
doping portions of the fin not covered by the semiconducting gate region, the dopant having a second type of majority carrier. - View Dependent Claims (19, 20, 21, 22, 23, 24)
-
-
25. A method for forming an electronic device, the method comprising:
-
providing a substrate;
forming a fin on the substrate, the fin being produced in a bulk semiconducting material of the substrate, the fin having a given width;
filling a space on either side of the fin with a non-conducting material until a given height of the fin is exposed above the substrate;
forming a thin oxide over the fin;
forming a semiconducting gate region over the thin oxide, the semiconducting gate region covering a channel, the channel being doped with a first type of majority carrier; and
doping portions of the fin not covered by the semiconducting gate region, the dopant having a second type of majority carrier. - View Dependent Claims (26, 27, 28)
-
-
29. An electronic device, comprising:
-
a fin on a substrate, the substrate comprising a bulk semiconducting material, the fin being fabricated by steps including;
(i) producing the fin in the bulk semiconducting material of the substrate, the fin having a given width;
(ii) filling a space on either side of the fin with a non-conducting material until a given height of the fin is exposed above the substrate; and
(iii) forming a thin oxide over the fin;
a gate region comprised of a semiconducting material, the gate region overlying a first portion of the fin, the first portion of the fin being doped with a majority carrier of a first type; and
a drain region formed on a second portion of the fin, the drain region being located on a first side of the gate region, the drain region being doped with a majority carrier of a second type. - View Dependent Claims (30, 31, 32)
-
Specification