Lithographic projection device, method an substrate for manufacturing electronic devices, and obtained electronic device

• US 20070103658A1
• Filed: 12/07/2004
• Published: 05/10/2007
• Est. Priority Date: 12/22/2003
• Status: Abandoned Application

• Current Assignee: Interuniversitair Micro-Electronica Centrum VZW (IMEC International), Koninklijke Philips N.V.
• Original Assignee: Koninklijke Philips N.V.
• Inventors: Dirksen, Peter
• Application Number:
  US10/596,510
• Publication Number:
  US 20070103658A1
• Time in Patent Office: Days
• US Class Current: 355/53
• CPC Class Codes: G03F 7/70308 Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Abstract

The invention proposes a lithographic projection device such as a wafer stepper for forming a pattern on a substrate or wafer, comprising a(n) (actinic) radiation or light source (2), illumination optics (4) for directing light issuing from said light source onto a mask (6) and projection optics (8) for directing diffracted radiation or light from said mask to the substrate/wafer to be imaged, wherein an optical filter (9) is provided downstream of said projection optics and an imageable substrate (7) having an optical filter (9) on the side to be imaged.

Claims

1. A lithographic projection device for forming a pattern on a substrate, comprising a radiation source (2) for emitting actinic radiation, illumination optics (4) for directing radiation issuing from said radiation source onto a mask (6) and projection optics (8) for directing diffracted radiation from said mask to the substrate to be imaged, said substrate being sensitive to actinic radiation, wherein an optical filter (9) is provided downstream of said projection optics.

2. The lithographic projection device according to claim 1, wherein said optical filter (9) is able to decrease the zero-order diffracted radiation while allowing transmission of first and/or higher diffraction orders.

3. The lithographic projection device according to claim 1, wherein said optical filter (9) is responsive to the angle of incident radiation.

4. The lithographic projection device according to claim 1, wherein said optical filter (9) comprises an interferometer, in particular a Fabry-Perot interferometer.

5. The lithographic projection device according to claim 4, wherein the interferometer comprises a dielectric coating (10, 14), in particular comprising SiO₂ and/or AquaTAR.

6. The lithographic projection device according to claim 1, wherein said optical filter (9) is associated with the substrate (7) to be imaged, in particular unitarily formed with a photoresist layer (12) of said substrate to be imaged.

7. The lithographic projection device according to claim 1, wherein said mask is a programmable mask.

8. The lithographic projection device according to claim 1, wherein said projection optics are demagnifying projection optics.

16. A manufacturing method for electronic devices, comprising the steps of:

imaging a substrate; and

developing said imaged substrate;

wherein a lithographic projection device according to claim 1.

9. An imageable substrate (7) comprising an optical filter (9) on the side to be imaged by actinic radiation having a wavelength λ

, said side having a photoresist.

10. The imageable substrate according to claim 9, wherein said optical filter is an optical filter (9) capable of decreasing the zero-order diffracted radiation while allowing transmission of first and/or higher diffraction orders.

11. The imageable substrate according to claim 9, wherein said optical filter (9) is responsive to the inclination angle of incident radiation.

12. The imageable substrate according to claim 9, wherein said optical filter (9) comprises an interferometer, in particular a Fabry-Perot interferometer.

13. The imageable substrate according to claim 12, wherein the interferometer comprises a dielectric coating (10, 14), in particular comprising SiO₂ and/or AquaTAR.

14. The imageable substrate according to claim 9, wherein the optical filter, in particular said interferometer, is a transparent layer or stack of layers on top of said photoresist.

15. The imageable substrate according to claim 9, wherein the optical filter, in particular said interferometer, comprises said photoresist layer (12), sandwiched between dielectric coatings (10, 14), in particular a photoresist layer (12) sandwiched between a bottom layer (14) of SiO₂ and a top layer (10) of AquaTAR, more particularly a λ

/4˜

50 nm photoresist layer sandwiched between a 150 nm bottom layer of SiO₂ and a 90 nm top layer of AquaTAR.