Method of fabricating microelectromechanical system structures

• US 20070105342A1
• Filed: 12/21/2006
• Published: 05/10/2007
• Est. Priority Date: 04/20/2004
• Status: Active Grant

• Current Assignee: Fern Ng, Jun Wei, Stephen Chee Wong, Yongling Wu
• Original Assignee: Fern Ng, Jun Wei, Stephen Chee Wong, Yongling Wu
• Inventors: Wei, Jun, Wu, Yongling, Wong, Stephen Chee, Ng, Fern
• Granted Patent: US 7,405,466 B2
• Time in Patent Office: Days
• US Class Current: 438/455
• CPC Class Codes: B81C 2203/031 Anodic bondings
• CPC Class Codes: B81C 3/001 Bonding of two components
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187

Abstract

A method of simultaneously bonding components, comprising the following steps. At least first, second and third components are provided and comprise: at least one glass component; and at least one conductive or semiconductive material component. The order of stacking of the components is determined to establish interfaces between the adjacent components. A hydrogen-free amorphous film is applied to one of the component surfaces at each interface comprising an adjacent: glass component; and conductive or semiconductive component. A sol gel with or without alkaline ions film is applied to one of the component surfaces at each interface comprising an adjacent: conductive or semiconductive component; and conductive or semiconductive component. The components are simultaneously anodically bonded in the determined order of stacking.

Claims

1. An anodically bonded component structure, comprising:

at least first, second and third components anodically bonded in a predetermined order and having interfaces between adjacent said at least first, second and third components;

at least one of said first, second and third components being comprised of a glass substrate and at least one of said first, second and third components being comprised of a conductive or semiconductive material;

each of said at least first, second and third components having an upper and lower surface;

an hydrogen-free amorphous film over and in direct contact with one of said component surfaces at each interface comprising an adjacent;

glass component; and

conductive or semiconductive component; and

a sol gel with or without alkaline ions film over and in direct contact with one of said component surfaces at each interface comprising an adjacent;

conductive or semiconductive component; and

conductive or semiconductive component.

2. The structure of claim 1, wherein said sol gel with or without alkaline ions film is applied to said interface surface of said conductive or semiconductive components;

and said hydrogen-free amorphous films are applied to said interface surface of either said;

conductive or semiconductive components;

or

glass components.

3. The structure of claim 1, wherein said hydrogen-free amorphous films are physical vapor deposition hydrogen-free amorphous films;

and the sol gel with or without alkaline ions films are sol gel spin-on films, sol gel immersion films or sol gel sprayed films.

4. The structure of claim 1, wherein said hydrogen-free amorphous films are laser ablation physical vapor deposition hydrogen-free amorphous films, evaporation physical vapor deposition hydrogen-free amorphous films, ion beam deposition physical vapor deposition hydrogen-free amorphous films or sputtered physical vapor deposition hydrogen-free amorphous films.

5. The structure of claim 1, wherein said hydrogen-free amorphous films are comprised of silicon, silicon oxide or silicon nitride.

6. The structure of claim 1, wherein said sol gel with or without alkaline ions films are formed from a solution comprised of:

methyltrimethoxysilane (MTMS);

methyltriethoxysilane (MTEOS);

tetraethylorthosilicate (TEOS);

phenyltrimethoxysilane (PhTMS);

methacryloxypropyltrimethoxysilane (MEMO);

(3-glycidoxypropyl)trimethoxysilane (GLYMO);

3-methoxypropyltrimethoxysilane (MeOPrTMS) or mixtures thereof;

an acid such as acetic acid hydrochloric acid or sulphuric acid;

water; and

alkali salts such as sodium, potassium or lithium.

7. The structure of claim 1, wherein said sol gel with or without alkaline ions films each have a thickness of from about 10 nm to 10 μ

m.

8. The structure of claim 1, wherein said sol gel with or without alkaline ions films each have a thickness of from about 10 to 100 nm.

9. The structure of claim 1, wherein said components upper and lower surfaces are hydrophilic.

10. The structure of claim 1, wherein said at least one of the first, second and third components comprised of a glass substrate also includes alkaline ions.

11. The structure of claim 1, wherein the structure is employed in a semiconductor device, an electronic device, a microelectromechanical system or a micro-optoelectromechanical system.

12. An anodically bonded component structure, comprising:

at least first, second and third components anodically bonded in a predetermined order and having interfaces between adjacent said at least first, second and third components;

at least one of said first, second and third components being comprised of a glass substrate and at least one of said first, second and third components being comprised of a conductive or semiconductive material;

each of said at least first, second and third components having an upper and lower surface;

an hydrogen-free amorphous film, comprised of silicon, silicon oxide or silicon nitride, over and in direct contact with one of said component surfaces at each interface comprising an adjacent;

glass component; and

conductive or semiconductive component; and

a sol gel with or without alkaline ions film over and in direct contact with one of said component surfaces at each interface comprising an adjacent;

conductive or semiconductive component; and

conductive or semiconductive component.

13. The structure of claim 12, wherein said sol gel with or without alkaline ions film is applied to the interface surface of the conductive or semiconductive components;

and the hydrogen-free amorphous films are applied to the interface surface of either the;

conductive or semiconductive components;

or

glass components.

14. The structure of claim 12, wherein said hydrogen-free amorphous films are physical vapor deposition hydrogen-free amorphous films;

and the sol gel with or without alkaline ions films are sol gel spin-on films, sol gel immersion films or sol gel sprayed films.

15. The structure of claim 12, wherein said hydrogen-free amorphous films are laser ablation physical vapor deposition hydrogen-free amorphous films, evaporation physical vapor deposition hydrogen-free amorphous films, ion beam deposition physical vapor deposition hydrogen-free amorphous films or sputtered physical vapor deposition hydrogen-free amorphous films.

16. The structure of claim 12, wherein said hydrogen-free amorphous films are comprised of silicon, silicon oxide or silicon nitride.

17. The structure of claim 12, wherein said sol gel with or without alkaline ions films are formed from a solution comprised of:

methyltrimethoxysilane (MTMS);

methyltriethoxysilane (MTEOS);

tetraethylorthosilicate (TEOS);

phenyltrimethoxysilane (PhTMS);

methacryloxypropyltrimethoxysilane (MEMO);

(3-glycidoxypropyl)trimethoxysilane (GLYMO);

3-methoxypropyltrimethoxysilane (MeOPrTMS) or mixtures thereof;

an acid such as acetic acid, hydrochloric acid or sulphuric acid;

water; and

alkali salts such as sodium, potassium or lithium.

18. The structure of claim 12, wherein said sol gel with or without alkaline ions films each have a thickness of from about 10 nm to 10 μ

m.

19. The structure of claim 12, wherein said sol gel with or without alkaline ions films each have a thickness of from about 10 to 100 nm.

20. The structure of claim 12, wherein said components upper and lower surfaces are hydrophilic.

21. The structure of claim 12, wherein said at least one of the first, second and third components comprised of a glass substrate also includes alkaline ions.

22. The structure of claim 12, wherein the structure is employed in a semiconductor device, an electronic device, a microelectromechanical system or a micro-optoelectromechanical system.

23. A bonded component structure, comprising:

at least first, second and third components anodically bonded in a predetermined order and having interfaces between adjacent said at least first, second and third components;

at least one of said first, second and third components being comprised of a glass substrate and at least one of said first, second and third components being comprised of a conductive or semiconductive material;

each of said at least first, second and third components having an upper and lower surface;

an hydrogen-free amorphous film over and in direct contact with one of the component surfaces at each interface comprising an adjacent;

glass component; and

conductive or semiconductive component; and

a sol gel with or without alkaline ions film over and in direct contact with one of the component surfaces at each interface comprising an adjacent;

conductive or semiconductive component; and

conductive or semiconductive component.

24. The structure of claim 23, wherein said sol gel with or without alkaline ions films each have a thickness of from about 10 nm to 10 μ

m.

25. The structure of claim 23, wherein said sol gel with or without alkaline ions films each have a thickness of from about 10 to 100 nm.