SILICIDED RECESSED SILICON
First Claim
1. An integrated circuit including a metal silicide structure, the structure comprising a metal silicide filling at least a lower portion of a recess without voids, the metal silicide comprising a mixture of at least a first metal having a greater diffusivity in silicon than silicon has in the first metal and a second metal having a lesser diffusivity in silicon than silicon has in the second metal.
7 Assignments
0 Petitions
Accused Products
Abstract
Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals diffuses more readily in silicon than silicon does in the metal, and another of the metals diffuses less readily in silicon than silicon does in the metal. An exemplary mixture includes 80% nickel and 20% cobalt. The silicon within the trench is allowed to fully silicide without void formation, despite a relatively high aspect ratio for the trench. Among other devices, recessed access devices (RADs) can be formed by the method for memory arrays.
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Citations
16 Claims
- 1. An integrated circuit including a metal silicide structure, the structure comprising a metal silicide filling at least a lower portion of a recess without voids, the metal silicide comprising a mixture of at least a first metal having a greater diffusivity in silicon than silicon has in the first metal and a second metal having a lesser diffusivity in silicon than silicon has in the second metal.
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10. A memory device comprising a recessed access device in a memory array, comprising:
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a recess within a semiconductor substrate;
a thin dielectric layer lining the recess; and
a metal silicide filling at least a lower portion of the trench without voids. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification