HIGH PERFORMANCE INTERCONNECT DEVICES & STRUCTURES

• US 20070105429A1
• Filed: 11/06/2006
• Published: 05/10/2007
• Est. Priority Date: 11/04/2005
• Status: Active Grant

• Current Assignee: Georgia Tech Research Corporation (University System of Georgia)
• Original Assignee: Georgia Tech Research Corporation (University System of Georgia)
• Inventors: HE, ATE, KOHL, PAUL, SPENCER, TODD, BAKIR, MUHANNAD, CUPTA, MARK
• Granted Patent: US 7,798,817 B2
• Time in Patent Office: Days
• US Class Current: 439/395
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 2223/6627 Waveguides, e.g. microstrip line, strip line, coplanar line
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 23/5225 Shielding layers formed together with wiring layers
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 2924/1903 including wave guides
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01P 1/047 Strip line joints
• CPC Class Codes: H05K 1/0219 Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
• CPC Class Codes: H05K 2201/09809 Coaxial layout reduction of cross-talk, noise or interference by printed shielding conductors for shielding around a single via or around a group of vias H05K1/0222
• CPC Class Codes: H05K 3/4644 by building the multilayer layer by layer, i.e. build-up multilayer circuits making via holes in the insulating layers H05K3/0011; special circuit boards as base or core whereon the multilayer is built H05K3/4602

Abstract

High performance interconnect devices, structures, and fabrication methods are provided herein. According to some embodiments of the present invention, an interconnect device used to connect components or route signals in an integrated circuit can comprise multiple conductors. A first conductor of the interconnect device can define a first conductor axis, and a second conductor of the interconnect device can define a second conductor axis. The second conductor can be proximate the first conduct such that first conductor axis is substantially coaxially situated relative to the second conductor axis to provide a high performance interconnect having a coaxial alignment. The first conductor and the second conductor can define a gap disposed between and separating the conductors. Other embodiments are also claimed and described.

Claims

1. An interconnect structure comprising

a first conductor of an interconnect;

a second conductor of the interconnect disposed proximate the first conductor such that first conductor is substantially coaxially situated to the second conductor; and

the first conductor and second conductor defining a gap between the first conductor and the second conductor, the gap comprising a gas that clads the first conductor, the interconnect connecting a first component to a second component.

2. The interconnect structure of claim 1, wherein the gap has a thickness ranging from approximately 10 micrometers to approximately 1 millimeter.

3. The interconnect structure of claim 1, wherein at least one of a polymer or air is disposed in the gap.

4. The interconnect structure of claim 1, wherein the first conductor is a hot conductor and the second conductor is a ground conductor such that the conductors form a waveguide to transmit a radio frequency signal.

5. The interconnect structure of claim 1, the first conductor having a diameter and the second conductor further having an inner diameter, wherein the ratio of the inner diameter to the diameter ranges from approximately one to approximately one and a half.

6. The interconnect structure of claim 1, wherein the first conductor and the second conductor have at least one of a polygonal or circular cross section area.

7. The interconnect structure of claim 1, wherein the first conductor and second conductor are formed with at least one of copper, gold, silver, nickel, or an alloy.

8. The interconnect structure of claim 1, wherein the first conductor and second conductor have a sidewall surface that is one of a substantially vertical alignment, a substantially horizontal alignment, a sloped alignment, or normal to a substrate surface.

9. The interconnect structure of claim 1, wherein the first conductor and the second conductor have an aspect ratio ranging from approximately 0.1 to approximately 100.

10. The interconnect structure of claim 1, wherein the first conductor is suspended on a surface extending from the second conductor and disposed in the gap.

11. The interconnect structure of claim 1, wherein the second conductor comprises multiple portions.

12. The interconnect structure of claim 1, wherein the interconnect has a height ranging from approximately ten micrometers to approximately 500 micrometers.

13. An interconnect fabrication method comprising:

providing a first conductor of an interconnect;

providing a second conductor of the interconnect;

disposing the second conductor proximate at least a portion of the first conductor so that first conductor and the second conductor are electrically separated by a gap disposed between the first conductor and the second conductor; and

aligning the first conductor axis and the second conductor axis in a substantially coaxial alignment such that interconnect is a coaxial interconnect.

14. The method of claim 13, further comprising providing a gas in the gap such that the gas is located between the first conductor and the second conductor and the gas clads the first conductor.

15. The method of claim 14, wherein the gas is air and wherein the gap consists essentially of air.

16. The method of claim 13, further comprising forming at least one of the first conductor and the second conductor to have at least one of a polygonal or circular cross sectional shape.

17. The method of claim 13, further comprising providing at least a portion of one of the first conductor or the second conductor by electroplating at least one of a metal or a metal alloy.

18. The method of claim 13, further comprising forming at least one of the first conductor and the second conductor with multiple portions to provide the first conductor or the second conductor is a composite.

19. The method of claim 13, further comprising coupling the first conductor to a hot plane that couples the first conductor to at least one other hot conductor of another interconnect structure, and coupling the second conductor to a ground plane so that the second conductor is coupled to at least one other ground conductor of another interconnect.

20. The method of claim 13, further comprising imprinting a material to provide a pattern used to form at least one of the first conductor and the second conductor.

21. The method of claim 13, wherein providing the second conductor comprises forming isolated detached portions.

22. In an integrated system comprising interconnects with multiple conductors, an interconnect structure comprising:

a first conductor proximate a substrate; and

a second conductor proximate the first conductor such that the second conductor is separated from the first conductor by a gap region disposed between the first conductor and the second conductor.

23. The interconnect structure of claim 22, wherein the second conductor is disposed at least partially above or below the first conductor.

24. The interconnect structure of claim 22, wherein the gap region comprises at least one air gap layered on a second air gap.

25. The interconnect structure of claim 22, the first conductor having an exterior sidewall surface and the second conductor having an interior sidewall surface, wherein the exterior sidewall surface is substantially parallel to the interior sidewall surface.

26. The interconnect structure of claim 22, further comprising a third conductor disposed below the first conductor, and situated proximate the second conductor so that the second and third conductors at least partially surround the first conductor.

27. The interconnect structure of claim 22, wherein the first conductor is suspended on a polymer layer above the substrate and the second conductor is generally disposed around the first conductor.

28. The interconnect structure of claim 22, further comprising a third conductor disposed between the first and second conductors and wherein the first and second conductors substantially encase the third conductor.

29. The interconnect structure of claim 22, wherein the first conductor and the second conductor are coaxially aligned.

30. The interconnect structure of claim 22, wherein the first conductor and the second conductor have corresponding angular turns such that the first and second conductors form a transmission line to carry a signal from a first component to a second component, wherein the first component and the second component are separated.