Sputtering target including titanium silicon oxide and method of making coated article using the same

• US 20070108043A1
• Filed: 11/14/2005
• Published: 05/17/2007
• Est. Priority Date: 11/14/2005
• Status: Abandoned Application

• Current Assignee: Guardian Glass LLC (KOCH Industries Incorporated)
• Original Assignee: Guardian Industries Corporation (KOCH Industries Incorporated)
• Inventors: Lu, Yiwei
• Application Number:
  US11/272,448
• Publication Number:
  US 20070108043A1
• Time in Patent Office: Days
• US Class Current: 204/192.150
• CPC Class Codes: C03C 17/2456 Coating containing TiO2
• CPC Class Codes: C03C 2217/212 TiO2
• CPC Class Codes: C03C 2217/213 SiO2
• CPC Class Codes: C03C 2218/155 by reactive sputtering
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Abstract

This invention relates to a sputtering target of or including Ti_1-xSi_xO_y and/or a method of making a coated article using such a sputtering target. In certain example embodiments, the Ti_1-xSi_xO_y may be substoichiometric with respect to oxygen. In certain example embodiments of this invention, the target may include Ti_1-xSi_xO_y where x is from about 0.05 to 0.95 (more preferably from about 0.1 to 0.9, and even more preferably from about 0.2 to 0.8, and possibly from about 0.5 to 0.8) and y is from about 0.2 to 1.95 (more preferably from about 0.2 to 1.95, and even more preferably from about 0.2 to 1.90, and possibly from about 1.0 to 1.85). The sputtering target may be sputtered in an atmosphere of or including one or more of Ar, O₂ and/or N₂ gas(es) in certain example embodiments of this invention.

Claims

1. A target for use in sputter depositing a layer(s) on a substrate, the target comprising a target material comprising Ti_1-xSi_xO_y where x is from about 0.05 to 0.95 and y is from about 0.2 to 1.95.

2. The target of claim 1, wherein x is from about 0.1 to 0.9, and y is from about 0.2 to 1.90.

3. The target of claim 1, wherein x is from about 0.2 to 0.8, and y is from about 1.0 to 1.85.

4. The target of claim 1, wherein the target material is supported by a conductive cathode tube.

5. The target of claim 4, wherein the target is a rotatable magnetron sputtering target, and one or more magnets is/are provided within the tube.

6. The target of claim 4, wherein a backing layer is provided between the target material and the cathode tube.

7. The target of claim 6, wherein the backing layer is conductive.

8. The target of claim 1, wherein the target material further comprises Al.

9. The target of claim 1, wherein the target material further comprises one or more of Zr, V, Hf, Nb, Ce, Sb, Bi, Zn, Sn and Mg.

10. The target of claim 1, wherein the target is a planar target.

11. A method of sputter-depositing a layer comprising silicon oxide and titanium oxide on a substrate, the method comprising:

providing a target comprising Ti_1-xSi_xO_y where x is from about 0.05 to 0.95 and y is from about 0.2 to 1.95, and

flowing argon and/or oxygen gas in a chamber where the target is located, so as to cause the layer comprising silicon oxide and titanium oxide to be formed on the substrate.

12. The method of claim 11, wherein the substrate is a glass substrate.

13. The method of claim 11, wherein the layer is formed directly on and contacting the substrate.

14. The method of claim 11, wherein at least one additional layer is provided between the substrate and the layer formed using the target.

15. The method of claim 11, wherein x is from about 0.1 to 0.9, and y is from about 0.2 to 1.90.

16. The method of claim 11, wherein x is from about 0.2 to 0.8, and y is from about 1.0 to 1.85.

17. The method of claim 11, wherein the target includes target material comprising Ti_1-xSi_xO_y which is supported by a conductive tube, and wherein the target is rotated during sputtering thereof.

18. The method of claim 17, wherein the target is a rotatable magnetron sputtering target, and one or more magnets is/are provided within the conductive tube, and wherein the magnets do not move during rotation of the tube and the target material.

19. The method of claim 17, wherein a backing layer is provided between the target material and the tube.

20. The method of claim 11, wherein the target further comprises Al.

21. The method of claim 11, wherein the target further comprises one or more of Al, Zr, V, Hf, Nb, Ce, Sb, Bi, Zn, Sn and Mg.

22. The method of claim 11, wherein the target is a planar target.

23. A target for use in sputter depositing a layer(s) on a substrate, the target comprising a target material comprising titanium, silicon and oxygen, so as to be a ceramic target.