Plasma etching of tapered structures

• US 20070108160A1
• Filed: 11/14/2006
• Published: 05/17/2007
• Est. Priority Date: 11/14/2005
• Status: Abandoned Application

• Current Assignee: Schott AG (Carl-Zeiss-Stiftung)
• Original Assignee: Schott AG (Carl-Zeiss-Stiftung)
• Inventors: Seidemann, Volker, Lange, Martin, Studzinski, Daniel, Ngo, Ha-Duong, Hiess, Andre'
• Application Number:
  US11/559,684
• Publication Number:
  US 20070108160A1
• Time in Patent Office: Days
• US Class Current: 216/2
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/14806 Structural or functional details thereof

Abstract

The invention relates to a method of plasma etching substrates, in particular of etching tapered passages through substrates, using a process gas comprising at least one halogenide and oxygen.

Claims

1. Method of plasma etching of at least parts of a substrate, comprising:

providing a substrate,

applying at least one structured mask comprising openings onto said substrate, and

removing material from said substrate at least in said openings by a plasma etching process using a process gas comprising at least one halogenide and oxygen.

2. Method of plasma etching of at least parts of a substrate according to claim 1, characterized in that the amount of oxygen in said process gas is less than 40% expressed as volume percentage of the gasses.

3. Method of plasma etching of at least parts of a substrate according to claim 1, characterized in that the ratio of said oxygen relative to said halogenide is less than 30% (volume percentage).

4. Method of plasma etching of at least parts of a substrate according to claim 1, characterized in that said halogenide is provided as a sulfur halogenide.

12. Method of plasma etching of at least parts of a substrate according to claim 1, wherein etching of said substrate is performed in at least two etching steps.

13. Method of plasma etching of at least parts of a substrate according to claim 12, wherein a first etching step has a higher etching rate than a following second etching step.

14. Method of plasma etching of at least parts of a substrate according to claim 12, wherein the amount of said oxygen is reduced in the second etching step.

16. Method of plasma etching of at least parts of a substrate according to claim 1, wherein etching of at least one passage into said substrate is performed in one etching step.

18. Method of plasma etching of at least parts of a substrate according to claim 1, characterized in that said process gas further comprises CHF₃.

19. Method of plasma etching of at least parts of a substrate according to claim 1, characterized in that said process gas further comprises C₄F₈.

22. Method of plasma etching of at least parts of a substrate according to claim 1, characterized in that said tapered passage defines a sidewall angle relative to the surface of said substrate, wherein said sidewall angle is adjusted between 50°

and 90°

.

24. Method of plasma etching of at least parts of a substrate according to claim 1, characterized in that the surface roughness of the sidewalls of said passages is below 30 nm, if said surface roughness is expressed as a standard surface roughness R_a of the sidewalls.

26. Method of plasma etching of at least parts of a substrate according to claim 1, wherein said passage defines an overhang below said mask, wherein a diameter of said passage is larger than the diameter of said opening, characterized in that the difference of said diameter of the opening and said a diameter of said passage is less than 10 μ

m .

27. Method of plasma etching of at least parts of a substrate according to claim 1, wherein said sidewalls are at least partially passivated.

32. Method of plasma etching of at least parts of a substrate according to claim 1, further comprising the step of thinning said substrate.

36. Method of plasma etching of at least parts of a substrate according to claim 1, further comprising the step of smoothing the substrate surface.

40. Method of plasma etching of at least parts of a substrate according to claim 1, characterized in that the amount of oxygen in said process gas is between 3 and 40%.

41. Method of plasma etching of at least parts of a substrate according to claim 1, characterized in that the temperature of said substrate during said plasma etching process is below 150°

C.

5-11. -11. (canceled)

15. (canceled)

17. (canceled)

20-21. -21. (canceled)

23. (canceled)

25. (canceled)

28-31. -31. (canceled)

33-35. -35. (canceled)

37-39. -39. (canceled)

42-43. -43. (canceled)

44. A method for producing an electronic component, comprising:

providing a substrate of said electronic component;

applying at least one structured mask comprising openings onto said substrate; and

removing material from said substrate at least in said openings by a plasma etching process using a process gas comprising at least one halogenide and oxygen.

45-58. -58. (canceled)

59. Photosensitive device comprising at least one array of photosensitive elements defining pixels of said photosensitive device, said photosensitive elements being rear side contacted with amplifiers, characterized in that at least one amplifier is assigned to each pixel.