METHOD OF SELECTIVELY DEPOSITING A THIN FILM MATERIAL AT A SEMICONDUCTOR INTERFACE

• US 20070108404A1
• Filed: 10/27/2006
• Published: 05/17/2007
• Est. Priority Date: 10/28/2005
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Stewart, Michael, Weidman, Timothy
• Application Number:
  US11/553,878
• Publication Number:
  US 20070108404A1
• Time in Patent Office: Days
• US Class Current: 252/79.100
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 7/08 Acids
• CPC Class Codes: C11D 7/3218 Alkanolamines or alkanolimines
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors

Abstract

Embodiments of the invention provide processes to form a high quality contact level connection to devices formed on a substrate. In one embodiment, a method for depositing a material on a substrate is provided which includes exposing the substrate to a buffered oxide etch solution to form a silicon hydride layer during a pretreatment process, depositing a metal silicide layer on the substrate, and depositing a first metal layer (e.g., tungsten) on the metal silicide layer. The buffered oxide etch solution may contain hydrogen fluoride and an alkanolamine compound, such as ethanolamine diethanolamine, or triethanolamine. The metal silicide layer may contain cobalt, nickel, or tungsten and may be deposited by an electroless deposition process. In one example, the substrate is exposed to an electroless deposition solution containing a solvent and a complexed metal compound.

Claims

1. A method for depositing a material on a substrate, comprising:

exposing a substrate to a buffered oxide etch solution to form a silicon hydride layer on the substrate during a pretreatment process, wherein the buffered oxide etch solution comprises diethanolamine, triethanolamine, and hydrogen fluoride.

depositing a metal silicide layer on the substrate; and

depositing a metal material on the metal silicide layer.

2. The method of claim 1, wherein the metal silicide layer comprises cobalt, nickel, tungsten, alloys thereof, or combinations thereof.

3. The method of claim 2, wherein the metal silicide layer is deposited by exposing the substrate to a deposition solution during an electroless deposition process.

4. The method of claim 3, wherein the deposition solution comprises a solvent and a complexed metal compound.

5. The method of claim 4, wherein the complexed metal compound is selected from a group consisting of cobalt tetracarbonyl, nickel dicyclooctadiene, and tungsten carbonyl.

6. The method of claim 5, wherein the solvent is acetonitrile or propylene glycol monomethyl ether.

7. The method of claim 1, wherein the metal material comprises tungsten or a tungsten alloy.

8. The method of claim 1, wherein the buffered oxide etch solution further comprises:

the diethanolamine at a concentration by weight within a range from about 0.5% to about 10%;

the triethanolamine at a concentration by weight within a range from about 0.5% to about 10%;

the hydrogen fluoride at a concentration by weight within a range from about 0. 5% to about 10%; and

the water at a concentration by weight within a range from about 80% to about 98%.

9. The method of claim 8, wherein the buffered oxide etch solution further comprises a pH value within a range from about 3.5 to about 5 and a viscosity within a range from about 10 cP to about 30 cP.

10. The method of claim 8, wherein the buffered oxide etch solution further comprises:

the diethanolamine is at a concentration within a range from about 2% to about 3%;

the triethanolamine is at a concentration within a range from about 2% to about 3%;

the hydrogen fluoride is at a concentration within a range from about 1% to about 3%;

the water is at a concentration within a range from about 88% to about 94%;

the pH value is within a range from about 4 to about 4.5; and

the viscosity is within a range from about 15 cP to about 25 cP.

11. A method for depositing a material on a substrate, comprising:

exposing a substrate to a buffered oxide etch solution to form a silicon hydride layer on the substrate during a pretreatment process, wherein the buffered oxide etch solution comprises hydrogen fluoride and at least two of compounds selected from the group consisting of ethanolamine, diethanolamine, and triethanolamine.

depositing a metal silicide layer on the substrate; and

depositing a first metal layer on the metal silicide layer.

12. The method of claim 11, wherein the metal silicide layer comprises cobalt, nickel, tungsten, alloys thereof, or combinations thereof.

13. The method of claim 11, wherein the metal silicide layer is deposited by exposing the substrate to a deposition solution during an electroless deposition process.

14. The method of claim 13, wherein the deposition solution comprises a solvent and a complexed metal compound.

15. The method of claim 14, wherein the complexed metal compound is selected from a group consisting of cobalt tetracarbonyl, nickel dicyclooctadiene, and tungsten carbonyl.

16. The method of claim 15, wherein the solvent is acetonitrile or propylene glycol monomethyl ether.

17. The method of claim 11, further comprising depositing a second metal layer on the first metal layer.

18. The method of claim 17, wherein the second metal layer comprises tungsten or a tungsten alloy.

19. The method of claim 11, wherein the buffered oxide etch solution further comprises:

diethanolamine at a concentration by weight within a range from about 0.5% to about 10%;

triethanolamine at a concentration by weight within a range from about 0.5% to about 10%;

the hydrogen fluoride at a concentration by weight within a range from about 0.5% to about 10%; and

the water at a concentration by weight within a range from about 80% to about 98%.

20. The method of claim 19, wherein the buffered oxide etch solution further comprises a pH value within a range from about 3.5 to about 5 and a viscosity within a range from about 10 cP to about 30 cP.

21. The method of claim 19, wherein the buffered oxide etch solution further comprises:

the diethanolamine is at a concentration within a range from about 2% to about 3%;

the triethanolamine is at a concentration within a range from about 2% to about 3%;

the hydrogen fluoride is at a concentration within a range from about 1% to about 3%;

the water is at a concentration within a range from about 88% to about 94%;

the pH value is within a range from about 4 to about 4.5; and

the viscosity is within a range from about 15 cP to about 25 cP.

22. A method for depositing a material on a substrate, comprising:

exposing a substrate to a buffered oxide etch solution to form a silicon hydride layer on the substrate during a pretreatment process, wherein the buffered oxide etch solution comprises hydrogen fluoride and at least two different alkanolamine compounds.

depositing a metal silicide layer on the substrate, wherein the metal silicide layer comprises at least one element selected from the group consisting of cobalt, nickel, and tungsten; and

depositing a metal material on the metal silicide layer.

23. The method of claim 22, wherein the metal silicide layer is deposited by exposing the substrate to a deposition solution during an electroless deposition process.

24. The method of claim 23, wherein the deposition solution comprises a solvent and a complexed metal compound.

25. The method of claim 24, wherein the complexed metal compound is selected from a group consisting of cobalt tetracarbonyl, nickel dicyclooctadiene, and tungsten carbonyl.

26. The method of claim 25, wherein the solvent is acetonitrile or propylene glycol monomethyl ether.

27. The method of claim 22, wherein the metal material comprises tungsten or a tungsten alloy.

28. The method of claim 22, wherein the at least two different alkanolamine compounds are selected from the group consisting of ethanolamine, diethanolamine and triethanolamine.

29. The method of claim 28, wherein the buffered oxide etch solution further comprises:

diethanolamine at a concentration by weight within a range from about 0.5% to about 10%;

triethanolamine at a concentration by weight within a range from about 0.5% to about 10%;

the hydrogen fluoride at a concentration by weight within a range from about 0.5% to about 10%; and

the water at a concentration by weight within a range from about 80% to about 98%.

30. The method of claim 29, wherein the buffered oxide etch solution further comprises a pH value within a range from about 3.5 to about 5 and a viscosity within a range from about 10 cP to about 30 cP.

31. The method of claim 29, wherein the buffered oxide etch solution further comprises:

the diethanolamine is at a concentration within a range from about 2% to about 3%;

the triethanolamine is at a concentration within a range from about 2% to about 3%;

the hydrogen fluoride is at a concentration within a range from about 1% to about 3%;

the water is at a concentration within a range from about 88% to about 94%;

the pH value is within a range from about 4 to about 4.5; and

the viscosity is within a range from about 15 cP to about 25 cP.