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Method of making nanowires

  • US 20070108435A1
  • Filed: 02/07/2006
  • Published: 05/17/2007
  • Est. Priority Date: 02/07/2005
  • Status: Abandoned Application
First Claim
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1. A means of forming a nanostructure entailing the steps of (a) forming a second semiconductor material on top of a first semiconductor material under semiconductor growth conditions that provide incomplete coverage of said second material on the surface of the first semiconductor layer, said incomplete coverage including a multiplicity of holes in said second semiconductor material, and (b) depositing a third semiconductor material that at least partially fills said holes to form a multiplicity of nanostructures.

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