Group III-nitrides on Si substrates using a nanostructured interlayer

• US 20070108466A1
• Filed: 08/29/2006
• Published: 05/17/2007
• Est. Priority Date: 08/31/2005
• Status: Active Grant

• Current Assignee: University of Florida Research Foundation, Incorporated (State University System of Florida)
• Original Assignee: University of Florida Research Foundation, Incorporated (State University System of Florida)
• Inventors: Kryliouk, Olga, Anderson, Timothy, Park, Hyun
• Granted Patent: US 8,946,674 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041

Abstract

A layered group III-nitride article includes a single crystal silicon substrate, and a highly textured group III-nitride layer, such as GaN, disposed on the silicon substrate. The highly textured group III-nitride layer is crack free and has a thickness of at least 10 μm. A method for forming highly textured group III-nitride layers includes the steps of providing a single crystal silicon comprising substrate, depositing a nanostructured In_xGa_1-xN (1≧x≧0) interlayer on the silicon substrate, and depositing a highly textured group III-nitride layer on the interlayer. The interlayer has a nano indentation hardness that is less than both the silicon substrate and the highly textured group III-nitride layer.

Claims

1. A layered group III-nitride article, comprising:

a single crystal silicon comprising substrate;

and a highly textured crystal group III-nitride layer disposed on said silicon substrate, said highly textured group III-nitride layer being crack free and having a thickness of at least 10 μ

m.

2. The article of claim 1, wherein said silicon substrate is (111) or (100) oriented.

3. The article of claim 2, wherein said highly textured group III-nitride layer comprises GaN.

4. The article of claim 3, further comprising an In—

Ga—

N alloy at an interface between said GaN layer and said silicon substrate.

5. A method for forming highly textured group III-nitride layers, comprising the steps of:

providing a single crystal silicon comprising substrate;

depositing a nanostructured In_xGa_1-xN (1≧

x≧

0) interlayer on said silicon substrate, and

depositing a highly textured group III-nitride layer on said interlayer, wherein said interlayer has a nano indentation hardness that is less than both said silicon substrate and said highly textured group III-nitride layer.

6. The method of claim 5, wherein said step of depositing a highly textured group III-nitride layer comprises a first group III-nitride layer deposition at a first temperature followed by a second group III-nitride layer deposition at a second temperature, wherein said first temperature is below a decomposition temperature of said In_xGa_1-xN and said second temperature is at least 150 C greater than said first temperature.

7. The method of claim 5, wherein said highly textured group III-nitride layer is crack free and has a thickness of at least 10 μ

m.

8. The method of claim 5, wherein said interlayer comprises a columnar film or nanorods having an average rod diameter of 300 to 700 nm.

9. The method of claim 5, wherein said silicon substrate is (111) oriented.

10. The method of claim 5, wherein said highly textured group III-nitride layer comprises GaN.

11. The method of claim 5, wherein x=1, said interlayer being InN.