Power Semiconductor Component With Charge Compensation Structure And Method For The Fabrication Thereof
First Claim
1. A semiconductor component with charge compensation structure, comprising, in a semiconductor body, a drift path between two electrodes, and the drift path having drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, and charge compensation zones of a complementary conduction type, which constrict the current path of the drift path, the drift zones comprising two alternately arranged, epitaxially grown drift zone types of the first conduction type, a first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.
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Abstract
The invention relates to a power semiconductor component (1) with charge compensation structure (3) and a method for the fabrication thereof. For this purpose, the power semiconductor component (1) has a semiconductor body (4) having a drift path (5) between two electrodes (6, 7). The drift path (5) has drift zones of a first conduction type, which provide a current path between the electrodes (6, 7) in the drift path, while charge compensation zones (11) of a complementary conduction type constrict the current path of the drift path (5). For this purpose, the drift path (5) has two alternately arranged, epitaxially grown diffusion zone types (9, 10), the first drift zone type (9) having monocrystalline semiconductor material on a monocrystalline substrate (12), and a second drift zone type (10) having monocrystalline semiconductor material in a trench structure (13), with complementarily doped walls (14, 15), the complementarily doped walls (14, 15) forming the charge compensation zones (11).
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Citations
66 Claims
- 1. A semiconductor component with charge compensation structure, comprising, in a semiconductor body, a drift path between two electrodes, and the drift path having drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, and charge compensation zones of a complementary conduction type, which constrict the current path of the drift path, the drift zones comprising two alternately arranged, epitaxially grown drift zone types of the first conduction type, a first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.
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24. A method for fabricating semiconductor components, the method comprising the following method steps of:
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providing a highly doped semiconductor wafer of a first or of a complementary conduction type having a multiplicity of semiconductor component positions, arranged in rows and columns, as a substrate of a semiconductor body;
growing an epitaxial layer of the first conduction type onto the semiconductor wafer as starting material for a first drift zone type;
introducing a trench structure in the semiconductor component positions;
doping the trench structure walls by means of a dopant layer of a complementary conduction type for charge compensation zones;
anisotropically etching free the bottom region of the trench structure and the top sides of the first drift zone types;
growing a medium-doped epitaxial layer of the first conduction type in the trench structure as starting material for a second drift zone type. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 60, 62)
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59. A method comprising the step of using of a proton accelerator
for producing n-doped regions in semiconductor components.
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65. A semiconductor component with charge compensation structure, comprising:
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a drift path between two electrodes, wherein the drift path has drift zones of a first conduction type and charge compensation zones of a complementary conduction type, and wherein the drift zones comprise two alternately arranged, epitaxially grown drift zone types of the first conduction type, a first drift zone type comprising monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type comprising monocrystalline semiconductor material in a trench structure with complementarily doped walls, the complementarily doped walls forming the charge compensation zones. - View Dependent Claims (66)
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Specification