Trench mosfet
First Claim
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1. An insulated gate field effect transistor, comprising:
- a source region of first conductivity type;
a body region of second conductivity type opposite to the first conductivity type adjacent to the source region;
a drift region of exclusively the first conductivity type adjacent to the body region;
a drain region of first conductivity type adjacent to the drift region, so that body and drift regions are arranged between the source and drain regions, the drain region being of higher doping density than the drift region; and
insulated trenches extending from the source region through the body region and into the drift region, each trench having sidewalls, and including insulator on the sidewalls, and a conductive gate electrode between the insulating sidewall, wherein the base of each trench is filled with an insulator plug adjacent to substantially all of the length of the drift region between the body region and drain region, and the respective gate electrode is provided in the trench over the plug adjacent to the source and body regions.
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Abstract
The invention relates to a trench MOSFET with drain (8), dπ ft region (10) body (12) and source (14). In order to improve the figure of meπt for use of the MOSFET as control and sync FETs, the trench (20) is partially filled with dielectric (24) adjacent to the drift region (10) and a graded doping profile is used in the dπft region (10)
33 Citations
10 Claims
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1. An insulated gate field effect transistor, comprising:
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a source region of first conductivity type;
a body region of second conductivity type opposite to the first conductivity type adjacent to the source region;
a drift region of exclusively the first conductivity type adjacent to the body region;
a drain region of first conductivity type adjacent to the drift region, so that body and drift regions are arranged between the source and drain regions, the drain region being of higher doping density than the drift region; and
insulated trenches extending from the source region through the body region and into the drift region, each trench having sidewalls, and including insulator on the sidewalls, and a conductive gate electrode between the insulating sidewall,wherein the base of each trench is filled with an insulator plug adjacent to substantially all of the length of the drift region between the body region and drain region, and the respective gate electrode is provided in the trench over the plug adjacent to the source and body regions. - View Dependent Claims (2, 3, 5, 6, 7, 8, 9, 10)
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4. An insulated gate field effect transistor according to claim I wherein the plug is of dielectric filler filling the trench between the insulator on the sidewalls adjacent to the drain region.
Specification