Micro-electromechanical switch, method of manufacturing an integrated circuit including at least one such switch, and an integrated circuit

• US 20070108540A1
• Filed: 10/17/2006
• Published: 05/17/2007
• Est. Priority Date: 10/18/2005
• Status: Abandoned Application

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Cuxart, Jofre
• Application Number:
  US11/582,948
• Publication Number:
  US 20070108540A1
• Time in Patent Office: Days
• US Class Current: 257/414
• CPC Class Codes: H01H 1/0036 Switches making use of microelectromechanical systems [MEMS] for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009
• CPC Class Codes: H01H 1/20 Bridging contacts for circuit breakers H01H73/045
• CPC Class Codes: H01H 59/0009 making use of micromechanics

Abstract

Integrated circuit obtained by a CMOS process and comprising circuit components and at least one micro-electromechanical switch comprising a layered structure, comprising an actuator electrode corresponding to a first conductive layer, at least one contact electrode corresponding to a second conductive layer, and a displaceable conductive element corresponding to a third conductive layer. The invention also relates to a method of manufacturing an integrated circuit including said switch, and to a circuit incorporating the switch.

Claims

1. An integrated circuit comprising circuit components and including at least one micro-electromechanical switch, said at least one switch comprising an actuator electrode, at least one contact electrode and a displaceable conductive element, whereby the displaceable conductive element is arranged so that it can be selectively displaced, according to the state of said actuator electrode, between an open state position in which it is not in contact with said at least one contact electrode, and a closed state position in which it is substantially in contact with said at least one contact electrode and in which the switch is in a closed state;

wherein

said switch comprises a layered structure comprising at least three conductive layers) at least some portions of which are separated by dielectric material, wherein

said at least one actuator electrode is formed out of at least a part of a first one of said conductive layers;

said at least one contact electrode is formed out of a second one of said conductive layers;

said displaceable conductive element is formed out of a third one of said conductive layers; and

said integrated circuit, including said circuit components and said at least one switch, has been obtained by a CMOS process including deposition of subsequent conductive layers separated by dielectric material and shaped so as to define, at least, said first actuator electrode, said at least one contact electrode and said displaceable conductive element.

2. An Integrated circuit according to claim 1, wherein said at least one contact electrode comprises at least two contact electrodes) separated by a gap, arranged so that when said displaceable conductive element is in said closed state position, said two contact electrodes are substantially in contact with said displaceable conductive element, whereby said displaceable conductive element provides for an electrical connection between said two contact electrodes.

3. An integrated circuit according to claim 1, wherein the displaceable conductive element (31) comprises a central portion (311) supported by a plurality of support beams (312), wherein both said central portion and said support beams are formed out of said third one (3) of said conductive layers.

4. An integrated circuit according to claim 1, wherein said actuator electrode is made of polysilicon.

5. An integrated circuit according to claim 1, wherein said actuator electrode is embodied in a polysilicon layer proximate to a silicon substrate of an integrated circuit.

6. An integrated circuit according to claim 1, wherein said actuator electrode is embodied in correspondence with a conductive layer making up parts of the circuit components of said integrated circuit, proximate to a silicon substrate of an integrated circuit.

7. An integrated circuit according to claim 1, wherein said actuator electrode is substantially of Al or of an aluminium alloy.

8. An integrated circuit according to claim 1, wherein said at least one contact electrode is made of metal.

9. An integrated circuit according to claim 1, wherein said displaceable conductive element is made of metal.

10. An integrated circuit according to claim 8, wherein said metal comprises at least 90% by weight of Al, TiN, Cu, W or any combination of thereof.

11. An integrated circuit according to claim 1, wherein said dielectric material separating at least part of said first one and said second one of said conductive layers, is SiO₂ or SiN.

12. An integrated circuit according to claim 1, wherein said dielectric material separating at least part of said second one and said third one of said conductive layers, is SiO₂ or SiN.

13. An integrated circuit according to claim 1, wherein said at least one contact electrode and said displaceable conductive element are substantially flat.

14. An integrated circuit according to claim 1, wherein said second one of said conductive layers, corresponding to said at least one contact electrode, is situated between said first one of said conductive layers, corresponding to the actuator electrode, and said third one of said conductive layers, corresponding to the displaceable conductive element.

15. An integrated circuit according to claim 1, further comprising a further actuator electrode formed out of a fourth one of the conductive layers of the switch structure, whereby said third one of said conductive layers is situated between said fourth one of said conductive layers and said second one of said conductive layers, wherein said further actuator electrode is arranged to contribute to the displacement of the displaceable conductive element between its closed state position and its open state position, according to the state of said further actuator electrode.

16. An integrated circuit according to claim 15, wherein said further actuator electrode is made of metal.

17. An integrated circuit according to claim 16, wherein said metal comprises at least 90% by weight of Al, TiN, Cu, W or any combination of thereof.

18. An integrated circuit according to claim 1 wherein said circuit components include transistors, resistors and capacitors.

19. An electronic circuit, including an integrated circuit according to claim 1.

20. An electronic circuit in accordance with claim 19, wherein said electronic circuit is a circuit for a radio frequency application.

21. The electronic circuit according to claim 19, wherein said electronic circuit includes a plurality of filters and wherein said integrated circuit includes a plurality of said micro-electromechanical switches arranged as a switch matrix for selecting one of said filters to filter a signal.

22. A method of manufacturing an integrated circuit comprising circuit components and at least one micro-electromechanical switch, said switch comprising an actuator electrode, at least one contact electrode and a displaceable conductive element, whereby the displaceable conductive element is arranged so that it can be selectively displaced, according to the state of said actuator electrode, between an open state position in which it is not in contact with said at least one contact electrode, and a closed state position in which it is substantially in contact with said at least one contact electrode and in which the switch is in a closed state;

wherein the method comprises the steps of;

sequentially applying, on a substrate, subsequent conductive layers substantially separated by dielectric material and selectively removing parts of said conductive layers so as to provide a layered structure comprising at least three conductive layers at least some portions of which are separated by dielectric material, whereby said subsequent conductive layers are applied so that a first one of said conductive layers establishes said at least one actuator electrode, a second one of said conductive layers establishes said at least one contact electrode, and a third one of said conductive layers establishes said displaceable conductive element;

removing part of the dielectric material so as to make said displaceable conductive element displaceable at least with regard to said at least one contact electrode, so that said displaceable conductive element can be selectively displaced, according to the state of said actuator electrode, between an open state position in which it is not in contact with said at least one contact electrode, and a closed state position in which it is substantially in contact with said at least one contact electrode and in which the switch is in a closed state;

wherein the method is a CMOS process including steps for establishing said circuit components and further involving deposition of subsequent conductive layers so as to define, at least, said first actuator electrode, said at least one contact electrode and said displaceable conductive element.

23. The method according to claim 22, wherein said second one of said conductive layers is applied so as to establish at least two contact electrodes, arranged so that when said displaceable conductive element is in said closed state position, said two contact electrodes are substantially in contact with said displaceable conductive element, whereby said displaceable conductive element provides for an electrical connection between said two contact electrodes.

24. The method according to claim 22, wherein the step of applying a third one of said conductive layers is carried out so as to produce a displaceable conductive element having a central portion supported by a plurality of support beams, whereby both said central portion and said support beams are formed out of said third one of said conductive layers.

25. The method according to claim 22, wherein said first one of said conductive layers is made of polysilicon.

26. The method according to claim 22, wherein said at least one contact electrode is made of metal.

27. The method according to claim 22, wherein said displaceable conductive element is made of metal.

28. The method according to claim 22, wherein said metal comprises at least 90% by weight of Al, TiN, Cu, W or any combination of thereof.

29. The method according to claim 22, performed so that said at least one contact electrode (21, 22) and said displaceable conductive element (31) are substantially flat.

30. The method according to claim 22, wherein said second one of said conductive layers is situated between said first one of said conductive layers and said third one of said conductive layers.

31. The method according to claim 22, further comprising the step of applying a fourth one of said conductive layers so as to establish a further actuator electrode, whereby said third one of said conductive layers is situated between said fourth one of said conductive layers and said second one of said conductive layers, wherein said further actuator electrode is established so as to contribute to the displacement of the displaceable conductive element between its closed state position and its open state position, according to the state of said further actuator electrode.

32. The method according to claim 22, wherein said circuit components include transistors, resistors and capacitors.

33. An integrated circuit, obtained by the method according to claim 22.