SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS, ELECTRONIC APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS

• US 20070109703A1
• Filed: 10/10/2006
• Published: 05/17/2007
• Est. Priority Date: 10/14/2005
• Status: Abandoned Application

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Shimura, Hidekichi
• Application Number:
  US11/548,012
• Publication Number:
  US 20070109703A1
• Time in Patent Office: Days
• US Class Current: 361/91.100
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H03K 19/0013 in field effect transistor circuits

Abstract

A semiconductor integrated circuit apparatus, electronic apparatus and method of manufacturing the semiconductor integrated circuit apparatus capable of achieving low power consumption without forming a critical path. The semiconductor integrated circuit apparatus is provided with first circuit block 3 including a critical path, second circuit block 4 including no critical path and driver 5, and sets a threshold voltage of a semiconductor element of a circuit in first circuit block 3 to be equal to or lower than a threshold voltage of a semiconductor element of a circuit in second circuit block 4, sets a supply voltage to be supplied to first circuit block 3 to be equal to or higher than a supply voltage to be supplied to second circuit block 4, thereby eliminating the critical path in first circuit block 3, sets a threshold voltage of a semiconductor element of a circuit in driver 5 to be equal to or lower than the threshold voltage of the semiconductor element of the circuit in second circuit block 4, and sets a supply voltage to be supplied to driver 5 to be equal to or lower than the supply voltage to be supplied to second circuit block 4, thereby reducing power consumption of driver 5.

Claims

1. A semiconductor integrated circuit apparatus comprising a plurality of circuit blocks including no critical path, wherein a threshold voltage of a semiconductor element of a circuit in one circuit block is set to be equal to or lower than a threshold voltage of a semiconductor element of a circuit in another circuit block, and a supply voltage to be supplied to said one circuit block is set to be equal to or lower than a supply voltage to be supplied to said another circuit block, thereby setting power consumption of said one circuit block lower than said another circuit block.

2. A semiconductor integrated circuit apparatus comprising:

a first circuit block including a critical path; and

second and third circuit blocks including no said critical path, wherein;

a threshold voltage of a semiconductor element of a circuit in said first circuit block is set to be equal to or lower than a threshold voltage of a semiconductor element of a circuit in said second circuit block and a supply voltage to be supplied to said first circuit block is set to be equal to or higher than a supply voltage to be supplied to said second circuit block, thereby eliminating the critical path in said first circuit block; and

a threshold voltage of a semiconductor element of a circuit in said third circuit block is set to be equal to or lower than the threshold voltage of the semiconductor element of the circuit in said second circuit block, and a supply voltage to be supplied to said third circuit block is set to be equal to or lower than the supply voltage to be supplied to said second circuit block, thereby reducing power consumption of said third circuit block.

3. The semiconductor integrated circuit apparatus according to claim 2, wherein the threshold voltage of the semiconductor element of the circuit in said third circuit block is set to equal to or lower than the threshold voltage of said first circuit block.

4. The semiconductor integrated circuit apparatus according to claim 2, wherein the circuit in said third circuit block is a driver that drives a line for transmitting a signal to each block.

5. The semiconductor integrated circuit apparatus according to claim 2, wherein said first circuit block, said second and third circuit blocks constitute a first functional block and the circuit of said third circuit block is a driver that drives a line for transmitting a signal from said first functional block to the circuit in the second functional block.

6. The semiconductor integrated circuit apparatus according to claim 1, wherein each of said plurality of circuit blocks comprises an SOI (Silicon On Insulator) structure comprised of a P-channel element and N-channel element.

7. The semiconductor integrated circuit apparatus according to claim 5, wherein, when power to said first functional block is cut off, a clock signal which sets said first functional block to a standby state is supplied to the circuit in said first functional block and the circuit in said second functional block.

8. The semiconductor integrated circuit apparatus according to claim 5, wherein, when said first functional block is on standby, the supply voltage supplied to the combination circuit in said first circuit block is cut off.

9. The semiconductor integrated circuit apparatus according to claim 5, wherein when said first functional block is on standby, the supply voltage supplied to said driver is cut off.

10. A method of manufacturing a semiconductor integrated circuit apparatus provided with a plurality of circuit blocks including no critical path, the method comprising:

a step of setting a threshold voltage of a semiconductor element of a circuit in one circuit block to be equal to or lower than a threshold voltage of a semiconductor element of a circuit in another circuit block; and

a step of setting a supply voltage to be supplied to said one circuit block to be equal to or lower than a supply voltage to be supplied to said another circuit block.

11. A method of manufacturing a semiconductor integrated circuit apparatus provided with a first circuit block including a critical path, second and third circuit blocks including no said critical path, the method comprising:

a step of setting a threshold voltage of a semiconductor element of a circuit in said first circuit block to be equal to or lower than a threshold voltage of a semiconductor element of a circuit in said second circuit block;

a step of setting a supply voltage to be supplied to said first circuit block to be equal to or higher than a supply voltage to be supplied to said second circuit block;

a step of detecting that the critical path in said first circuit block is eliminated;

a step of setting a threshold voltage of a semiconductor element of a circuit in said third circuit block to be equal to or lower than the threshold voltage of the semiconductor element of the circuit in said second circuit block; and

a step of setting a supply voltage to be supplied to said third circuit block to be equal to or lower than the supply voltage to be supplied to said second circuit block.

12. An electronic apparatus comprising said semiconductor integrated circuit apparatus according to claim 1.

13. An electronic apparatus comprising said method of manufacturing a semiconductor integrated circuit apparatus according to claim 10.