COMPENSATING FOR COUPLING DURING READ OPERATIONS OF NON-VOLATILE MEMORY
First Claim
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1. A non-volatile memory system, comprising:
- a set of non-volatile storage elements; and
one or more managing circuits in communication with said set of non-volatile storage elements, said one or more managing circuits perform a read process for a set of non-volatile storage elements using a set of reference values to determine said set of read data stored in said set of non-volatile storage elements, said one or more managing circuits capable of determining that said read data has one or more errors that cannot be corrected by an error correction process and performing a data recovery process if said error correction process is not able to correct said one or more errors, said data recovery process comprises reading non-volatile storage elements adjacent to said a set of non-volatile storage elements and adjusting at least a subset of said reference values based on reading of said non-volatile storage elements adjacent to said set of non-volatile storage elements and performing another one or more read processes for said set of non-volatile storage elements using said adjusted reference values.
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Abstract
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.
143 Citations
9 Claims
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1. A non-volatile memory system, comprising:
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a set of non-volatile storage elements; and
one or more managing circuits in communication with said set of non-volatile storage elements, said one or more managing circuits perform a read process for a set of non-volatile storage elements using a set of reference values to determine said set of read data stored in said set of non-volatile storage elements, said one or more managing circuits capable of determining that said read data has one or more errors that cannot be corrected by an error correction process and performing a data recovery process if said error correction process is not able to correct said one or more errors, said data recovery process comprises reading non-volatile storage elements adjacent to said a set of non-volatile storage elements and adjusting at least a subset of said reference values based on reading of said non-volatile storage elements adjacent to said set of non-volatile storage elements and performing another one or more read processes for said set of non-volatile storage elements using said adjusted reference values. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification