COMPENSATING FOR COUPLING DURING READ OPERATIONS OF NON-VOLATILE MEMORY
First Claim
Patent Images
1. A method for reading a set of non-volatile storage elements, comprising:
- for each non-volatile storage element of at least a subset of said non-volatile storage elements, determining an offset from a predetermined set of offsets based on a charge level stored in an adjacent storage element; and
performing a set of read processes for said set of non-volatile storage elements, each read process of said set uses a different one of said predetermined set of offsets and is performed on all of said set of non-volatile storage elements, there is at least one read process for each offset, each of at least said subset of said set of non-volatile storage element provides final data from an appropriate one of said read processes associated with said offset determined for the respective non-volatile storage element.
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Abstract
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.
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4 Claims
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1. A method for reading a set of non-volatile storage elements, comprising:
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for each non-volatile storage element of at least a subset of said non-volatile storage elements, determining an offset from a predetermined set of offsets based on a charge level stored in an adjacent storage element; and
performing a set of read processes for said set of non-volatile storage elements, each read process of said set uses a different one of said predetermined set of offsets and is performed on all of said set of non-volatile storage elements, there is at least one read process for each offset, each of at least said subset of said set of non-volatile storage element provides final data from an appropriate one of said read processes associated with said offset determined for the respective non-volatile storage element. - View Dependent Claims (2, 3, 4)
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Specification