MEMORY DEVICE WITH IMPROVED WRITING CAPABILITIES
First Claim
Patent Images
1. A memory device, comprising:
- a memory element for storing an information value selected from a first information value being represented by a first potential and a second information value being represented by a second potential, the first potential being less than the second potential;
a bit line for selectively writing the first information value or the second information value to the memory element; and
a potential controller coupled to the bit line, the potential controller being configured to apply a third potential to the bit line, which is less than the first potential when writing the first information value to the memory element.
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Abstract
Method and memory device for reliably writing an information value to a memory element of the memory device. A first information value is represented by a first potential and a second information value is represented by a second potential. A bit line is provided for writing either the first information value or the second information value to the memory element. A potential controller is coupled to the bit line, where the potential controller is configured to apply a third potential to the bit line, which is less than the first potential when writing the first information value to the memory element.
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Citations
23 Claims
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1. A memory device, comprising:
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a memory element for storing an information value selected from a first information value being represented by a first potential and a second information value being represented by a second potential, the first potential being less than the second potential;
a bit line for selectively writing the first information value or the second information value to the memory element; and
a potential controller coupled to the bit line, the potential controller being configured to apply a third potential to the bit line, which is less than the first potential when writing the first information value to the memory element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A memory device, comprising:
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a memory element for storing an information value selected from a first information value being represented by a first potential and a second information value being represented by a second potential, the first potential being less than the second potential;
a bit line for writing either the first information value or the second information value to the memory element; and
a potential controller coupled to the bit line, the potential controller being configured to apply a third potential to the bit line, which is greater than the second potential when writing the second information value to the memory element.
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22. A method for writing either a first information value or a second information value via a bit line to a memory element, the first information value being represented by a first potential, the second information value being represented by a second potential, the method comprising:
applying a third potential to the bit line when writing the first information value to the memory element, the third potential being less than the first potential.
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23. A method for writing either a first information value or a second information value via a bit line to a memory element, the first information value being represented by a first potential, the second information value being represented by a second potential, the method comprising:
applying a third potential to the bit line when writing the second information value to the memory element, the third potential being greater than the second potential.
Specification