Formation of metal silicide layer over copper interconnect for reliability enhancement
First Claim
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1. A method of fabrication of a sputtered metal silicide layer over a copper interconnect;
- comprising the steps of;
providing a dielectric layer over a semiconductor structure;
providing an interconnect opening in said dielectric layer;
providing a copper interconnect in said interconnect opening;
forming metal silicide layer over said copper interconnect using a sputter process.
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Abstract
A method of fabrication of a sputtered metal silicide layer over a copper interconnect. We form a dielectric layer over a conductive layer. We form an interconnect opening in the dielectric layer. We form a copper layer at least filling the interconnect opening. We planarize the copper layer to form a copper interconnect in the interconnect opening. The copper interconnect is over polished to form a depression. We form metal silicide layer over the copper interconnect using a low temperature sputtering process. We can form a cap layer over the metal silicide layer.
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Citations
22 Claims
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1. A method of fabrication of a sputtered metal silicide layer over a copper interconnect;
- comprising the steps of;
providing a dielectric layer over a semiconductor structure;
providing an interconnect opening in said dielectric layer;
providing a copper interconnect in said interconnect opening;
forming metal silicide layer over said copper interconnect using a sputter process. - View Dependent Claims (2, 3, 4, 5)
- comprising the steps of;
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6. A method of fabrication of a sputtered metal silicide cap over a copper interconnect;
- comprising the steps of;
forming a dielectric layer over a semiconductor structure;
forming an interconnect opening in said dielectric layer;
forming a copper layer at least filling said interconnect opening;
removing said copper layer over the dielectric layer to form a copper interconnect in said interconnect opening;
said copper interconnect has a top surface below the top surface of the surrounding dielectric layer;
forming metal silicide layer over said copper interconnect using a sputter process;
planarizing said metal silicide layer to form a metal silicide cap. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
- comprising the steps of;
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17. A method of fabrication of a sputtered metal silicide layer over a copper interconnect;
- comprising the steps of;
forming a conductive layer over a semiconductor structure;
forming a capping layer over said conductive layer;
forming a dielectric layer over said capping layer and said conductive layer;
forming an interconnect opening in said dielectric layer;
said interconnect opening has a dual damascene shape;
forming a copper layer at least filling said interconnect opening;
(1) said copper layer is formed by an electroplating or electroless process;
planarizing said copper layer to form a copper interconnect in said interconnect opening;
said copper interconnect has a top surface between about 100 and 300 angstroms below the top surface of the surrounding dielectric layer;
forming a metal silicide layer over said copper interconnect using a sputter process;
(1) the metal silicide layer is formed using a sputter process at a temperature between 20 and 180 degree C.;
(2) said metal silicide layer is comprised of a material selected from the group consisting of;
WSi, CoSi, NiSi, and CuSi;
planarizing said metal silicide layer to form a metal silicide cap. - View Dependent Claims (18, 19, 20, 21, 22)
- comprising the steps of;
Specification