TECHNIQUE FOR THE GROWTH OF PLANAR SEMI-POLAR GALLIUM NITRIDE

• US 20070111531A1
• Filed: 01/09/2007
• Published: 05/17/2007
• Est. Priority Date: 03/10/2005
• Status: Active Grant

• Current Assignee: Japan Science & Technology Trading Co. Limited
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Nakamura, Shuji, Baker, Troy, DenBaars, Steven, Haskell, Benjamin, Speck, James, Fini, Paul
• Granted Patent: US 7,704,331 B2
• Time in Patent Office: Days
• US Class Current: 438/724
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: Y10S 438/938 Lattice strain control or utilization

Abstract

A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate'"'"'s surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate

Claims

1. A method for growing a nitride film, comprising growing a semi-polar nitride film on a substrate.

2. The method of claim 1, wherein the semi-polar nitride film is grown parallel to the substrate'"'"'s surface.

3. The method of claim 2, wherein the the substrate is a miscut substrate.

4. A semi-polar nitride film grown on a substrate.

5. The semi-polar nitride film of claim 4, wherein the semi-polar nitride film is a planar, semi-polar nitride film.

6. The semi-polar nitride film of claim 5, wherein the planar, semi-polar nitride film is grown parallel to the substrate'"'"'s surface.

7. The semi-polar nitride film of claim 6, wherein the the substrate is a miscut substrate.