Material for forming adhesion reinforcing layer, adhesion reinforcing layer, semiconductor device, and manufacturing method thereof
First Claim
1. A material for forming an adhesion reinforcing layer comprising any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane.
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Accused Products
Abstract
The present invention aims at providing: a material for forming an adhesion reinforcing layer which can reinforce the adhesion between a low dielectric constant film, especially a low dielectric constant film containing an inorganic material, and other members; an adhesion reinforcing layer formed by the said material and exhibits superior adhesion; a fast and highly reliable semiconductor device having the adhesion reinforcing layer; and a manufacturing method thereof. The material for forming an adhesion reinforcing layer contains at least any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane. The adhesion reinforcing layer is formed by the said material. The manufacturing method of a semiconductor device includes a process for forming a low dielectric constant film and, at least before or after the process for forming a low dielectric constant film, a process for forming an adhesion reinforcing layer with the said material.
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Citations
19 Claims
- 1. A material for forming an adhesion reinforcing layer comprising any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane.
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8. An adhesion reinforcing layer comprising any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane,
wherein the adhesion reinforcing layer is formed with a material for forming an adhesion reinforcing layer, and the material for forming an adhesion reinforcing layer comprises any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane.
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11. A method for manufacturing a semiconductor device comprising the steps of:
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forming a low dielectric constant film to form a low dielectric constant film on a substrate, and forming an adhesion reinforcing layer to form an adhesion reinforcing layer using a material for forming an adhesion reinforcing layer, wherein the step of forming an adhesion reinforcing layer is performed at least any of before and after the step of forming a low dielectric constant film, and the material for forming an adhesion reinforcing layer comprises any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising an adhesion reinforcing layer,
wherein the adhesion reinforcing layer is formed with a material for forming an adhesion reinforcing layer, and the semiconductor device is manufactured by a method for manufacturing a semiconductor device, wherein the material for forming an adhesion reinforcing layer comprises any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane, and the semiconductor device is manufactured by a method for manufacturing a semiconductor device comprising the steps of: -
forming a low dielectric constant film to form a low dielectric constant film on a processed substrate, and forming an adhesion reinforcing layer to form an adhesion reinforcing layer using a material for forming an adhesion reinforcing layer, wherein the step of forming an adhesion reinforcing layer is performed at least any of before and after the step of forming a low dielectric constant film.
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Specification