Methods of forming silicon dioxide layers using atomic layer deposition

• US 20070111545A1
• Filed: 09/14/2006
• Published: 05/17/2007
• Est. Priority Date: 11/16/2005
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Hwang, Ki-hyun, Lee, Sung-hae, Kim, Hong-suk, Yang, Sang-ryol, Kim, Jin-gyun, Noh, Jin-tae
• Application Number:
  US11/521,145
• Publication Number:
  US 20070111545A1
• Time in Patent Office: Days
• US Class Current: 438/787
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02208 the precursor containing a compound comprising Si
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31612 on a silicon body

Abstract

Provided herein are methods of forming a silicon dioxide layer on a substrate using an atomic layer deposition (ALD) method that include supplying a Si precursor to the substrate and forming on the substrate a Si layer including at least one Si atomic layer; and (b) supplying an oxygen radical to the Si layer to replace at least one Si—Si bond within the Si layer with a Si—O bond, thereby oxidizing the Si layer, to form a silicon dioxide layer on the substrate.

Claims

1. A method of forming a silicon dioxide layer on a substrate comprising:

supplying a Si precursor to the substrate and forming on the substrate a Si layer comprising at least one Si atomic layer; and

supplying an oxygen radical to the Si layer to replace at least one Si—

Si bond within the Si layer with a Si—

O bond, thereby oxidizing the Si layer,

to form the silicon dioxide layer on the substrate.

2. The method of claim 1, wherein the Si precursor comprises at least one compound selected from the group consisting of SiCl₄, SiHCl₃, Si₂Cl₆, SiH₂Cl₂, Si₃Cl₈ and Si₃H₈.

3. The method of claim 1, wherein the oxygen radical is generated from an O₂ plasma or ozone.

4. The method of claim 1, wherein supplying the Si precursor to the substrate and forming on the substrate the Si layer comprising at least one Si atomic layer comprises:

(a) supplying the Si precursor to the substrate and forming at least one Si atomic layer on the substrate;

(b) removing excess Si precursor and any reaction by-products produced during the formation of the at least one Si atomic layer;

(c) supplying hydrogen atoms to the at least one Si atomic layer;

(d) removing excess hydrogen and any reaction byproducts produced during the supply of hydrogen atoms to the at least one Si atomic layer; and

optionally

(e) repeating (a) through (d) at least once to form the Si layer on the substrate.

5. The method of claim 1, wherein the Si layer comprises an amorphous silicon layer or a polysilicon layer.

6. The method of claim 1, wherein the Si layer has a thickness in a range of about 5 to about 100 Å

.

7. The method of claim 1, wherein supplying the Si precursor to the substrate, forming on the substrate the Si layer and supplying the oxygen radical to the Si layer are performed at a temperature in a range of about 25°

C. to about 800°

C.

8. The method of claim 1, further comprising repeating supplying the Si precursor, forming on the substrate the Si layer and supplying the oxygen radical to the Si layer, at least once, to form the silicon dioxide layer on the substrate.

9. A method of forming a silicon dioxide layer on a substrate comprising:

supplying a Si precursor to the substrate and forming on the substrate a Si layer comprising at least one Si atomic layer;

removing excess Si precursor and any reaction by-products produced during the formation of the Si layer;

supplying an oxygen radical to the Si layer to replace at least one Si—

Si bond within the Si layer with a Si—

O bond, thereby oxidizing the Si layer; and

removing excess oxygen radicals and any reaction by-products produced during the oxidation of the Si layer,

to form the silicon dioxide layer on the substrate.

10. The method of claim 9, further comprising repeating supplying the Si precursor to the substrate, removing excess Si precursor and reaction by-products, supplying the oxygen radical to the Si layer and removing excess oxygen and reaction by-products, at least once, to form the silicon dioxide layer on the substrate.

11. The method of claim 9, wherein the Si precursor comprises at least one compound selected from the group consisting of SiCl₄, SiHCl₃, Si₂Cl₆, SiH₂Cl₂, Si₃Cl₈ and Si₃H₈.

12. The method of claim 9, wherein the oxygen radical is generated from an O₂ plasma or ozone.

13. The method of claim 12, wherein the supplying of the oxygen radical comprises applying a radio frequency (RF) power while supplying O₂.

14. The method of claim 9, wherein supplying the Si precursor to the substrate and forming on the substrate the Si layer comprising at least one Si atomic layer comprises

(a) supplying the Si precursor to the substrate and forming at least one Si atomic layer on the substrate;

(b) removing excess Si precursor and any reaction by-products produced during the formation of the at least one Si atomic layer;

(c) supplying hydrogen atoms to the at least one Si atomic layer;

(d) removing excess hydrogen and any reaction byproducts produced during the supply of the hydrogen atoms to the at least one Si atomic layer; and

optionally

(e) repeating (a) through (d) at least once to form the Si layer.

15. The method of claim 9, wherein supplying the Si precursor to the substrate, removing excess Si precursor and reaction by-products, supplying hydrogen atoms to the at least one Si atomic layer and removing excess hydrogen and reaction by-products are performed at a temperature in a range of about 25°

C. to about 800°

C.

16. The method of claim 9, wherein the removal of the excess Si precursor and any reaction by-products produced during the formation of the Si layer and the removal of the excess oxygen radicals and any reaction by-products produced during the oxidation of the Si layer are each independently performed by purging with an inert gas;

exhausting;

or a combination thereof.

17. The method of claim 9, wherein the Si layer comprises an amorphous silicon layer.

18. The method of claim 9, wherein the Si layer has a thickness in a range of about 5 Å

to about 100 Å

.