Material system of photovoltaic cell with micro-cavity

• US 20070113887A1
• Filed: 11/18/2005
• Published: 05/24/2007
• Est. Priority Date: 11/18/2005
• Status: Abandoned Application

• Current Assignee: Higher Way Electronic Co., Ltd., Millennium Communication Co., Ltd.
• Original Assignee: Higher Way Electronic Co., Ltd., Millennium Communication Co., Ltd.
• Inventors: Hsieh, Wen-Sheng, Laih, Lih-Wen, Laih, Lih-Hong
• Application Number:
  US11/281,451
• Publication Number:
  US 20070113887A1
• Time in Patent Office: Days
• US Class Current: 136/259
• CPC Class Codes: H01L 31/02167 for solar cells
• CPC Class Codes: H01L 31/02168 the coatings being antireflective or having enhancing optical properties for the solar cells
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

A photovoltaic cell with resonance cavity is provided. A first structure of reflection is attached toward one side of the resonance cavity and configured for reflecting light beams from the resonance cavity. The second structure of reflection is attached toward other side of the resonance cavity and configured for reflecting light beams from exterior and the resonance cavity. Thus, photos will be absorbed efficiently within the resonance cavity and converted into electrons.

Claims

1. A material system of photovoltaic cell, comprising:

an absorbing structure with a first side and a second side;

a first layer attached to said first side, wherein said first layer is configured for receiving light beams from exterior with a third side and reflecting light beams from said absorbing structure with a fourth side; and

a second layer attached to said second side and configured for reflecting light beams from said absorbing structure, wherein photo resonance is implemented within said absorbing structure by way of said first layer associated with said second layer.

2. The material system of photovoltaic cell according to claim 1, wherein said absorbing structure comprises a layer of front conductor, an absorber layer and a layer of back conductor.

3. The material system of photovoltaic cell according to claim 2, wherein said first side is provided by said layer of front conductor and said second side is provided by said layer of back conductor.

4. The material system of photovoltaic cell according to claim 2, wherein said absorber layer is made of crystalline silicon-based material.

5. The material system of photovoltaic cell according to claim 2, wherein said absorber layer is made of amorphous silicon-based material.

6. The material system of photovoltaic cell according to claim 2, wherein said absorber layer is made of semiconductor compound.

7. The material system of photovoltaic cell according to claim 2, wherein said layer of front conductor and said layer of back conductor are made of semiconductor materials being doped differently each other.

8. The material system of photovoltaic cell according to claim 1, wherein said first layer comprises an anti-reflection coating at said third side.

9. The material system of photovoltaic cell according to claim 1, wherein said first layer comprises a plurality of layers of different reflectivity.

10. The material system of photovoltaic cell according to claim 9, wherein said first layer have a plurality of reflectivity increased from said third side to fourth side.

11. The material system of photovoltaic cell according to claim 1, wherein said first layer comprises a high-reflection coating (HR coating) at said fourth side, and said high-reflection coating has a reflectivity substantial in excess of 99.8%.

12. The material system of photovoltaic cell according to claim 1, wherein said second layer is made of metal material.

13. The material system of photovoltaic cell according to claim 1, wherein said second layer is made of alloy materials.

14. The material system of photovoltaic cell according to claim 1, wherein said second layer is made of dielectric material of Distributed Bragg Reflector (DBR).

15. The material system of photovoltaic cell according to claim 1, wherein said second layer is made of semiconductor materials.

16. The material system of photovoltaic cell according to claim 1, wherein said second layer is made of the materials selected from the groups consisted of metal, alloy, dielectric material, insulating material, semiconductor material and the combination of thereof.

17. A photovoltaic cell with resonance cavity, comprising:

a resonance cavity;

a first structure of reflection attached to one side of said resonance cavity and configured for reflecting light beams from said resonance cavity; and

a second structure of reflection attached to other side of said resonance cavity and configured for reflecting light beams from exterior and said resonance cavity.

18. The photovoltaic cell with resonance cavity according to claim 17, wherein said first structure of reflection is further configured for receiving light beams from exterior.

19. The photovoltaic cell with resonance cavity according to claim 17, wherein said first structure of reflection comprises an anti-reflection (AR) coating attached to said resonance cavity.

20. The photovoltaic cell with resonance cavity according to claim 17, wherein said second structure of reflection is made of the material selected from the group consisted of metal, alloy, dielectric material, semiconductor material and the combination of thereof.