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lll-Nitride compound semiconductor light emiting device

  • US 20070114511A1
  • Filed: 07/02/2004
  • Published: 05/24/2007
  • Est. Priority Date: 07/03/2003
  • Status: Active Grant
First Claim
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1. III-nitride compound semiconductor light-emitting device having a plurality of III-nitride compound semiconductor layers that are epitaxially grown using a substrate:

  • wherein the plurality of III-nitride compound semiconductor layers include an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, and wherein the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching, the exposed surface includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened.

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