lll-Nitride compound semiconductor light emiting device
First Claim
1. III-nitride compound semiconductor light-emitting device having a plurality of III-nitride compound semiconductor layers that are epitaxially grown using a substrate:
- wherein the plurality of III-nitride compound semiconductor layers include an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, and wherein the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching, the exposed surface includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened.
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Accused Products
Abstract
The present invention relates to a HI-nitride semiconductor light-emitting device having high external quantum efficiency, provides a HI-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is rough-ened, thereby it is possible to increase external quantum efficiency of the light-emitting device.
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Citations
13 Claims
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1. III-nitride compound semiconductor light-emitting device having a plurality of III-nitride compound semiconductor layers that are epitaxially grown using a substrate:
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wherein the plurality of III-nitride compound semiconductor layers include an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, and wherein the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching, the exposed surface includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification