Rectifying contact to an n-type oxide material or a substantially insulating oxide material

• US 20070114528A1
• Filed: 11/21/2005
• Published: 05/24/2007
• Est. Priority Date: 11/21/2005
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Herman, Gregory, Hoffman, Randy
• Granted Patent: US 7,329,915 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/242 AIBVI or AIBVII compounds, e.g. Cu2O, Cu I H01L29/247 takes precedence
• CPC Class Codes: H01L 29/47 Schottky barrier electrodes H01L29/435 takes precedence
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material. The metal species is selected from tin, zinc, and combinations thereof.

Claims

1. A rectifying contact, comprising:

a p-type oxide material electrically coupled to at least one of an n-type oxide material or a substantially insulating oxide material, the p-type oxide material including;

a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and

a metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, the metal species selected from tin, zinc, and combinations thereof.

2. The rectifying contact as defined in claim 1 wherein the copper species is present in an amount of about 50 atomic % of total metal in the p-type oxide material, and wherein the metal species is present in an amount of about 50 atomic % of total metal in the p-type oxide material.

3. The rectifying contact as defined in claim 1 wherein the copper species is present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material, and wherein the metal species is present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material.

4. The rectifying contact as defined in claim 1 wherein the n-type oxide material is selected from an oxide of zinc, tin, indium, gallium, and combinations thereof.

5. The rectifying contact as defined in claim 4 wherein the n-type oxide material is selected from zinc oxide, tin oxide, indium oxide, zinc indium oxide, zinc tin oxide, gallium indium oxide, zinc indium gallium oxide, zinc tin gallium oxide, and combinations thereof.

6. The rectifying contact as defined in claim 1 wherein the p-type oxide material is at least semi-transparent.

7. The rectifying contact as defined in claim 1 wherein the p-type oxide material is substantially amorphous.

8. The rectifying contact as defined in claim 1 wherein the rectifying contact exhibits a forward-to-reverse current ratio of greater than about 10.

9. The rectifying contact as defined in claim 1 wherein the rectifying contact exhibits a forward-to-reverse current ratio of greater than about 100.

10. The rectifying contact as defined in claim 1 wherein the rectifying contact exhibits a forward-to-reverse current ratio of greater than about 1000.

11. The rectifying contact as defined in claim 1 wherein the metal species is a metal oxide material.

12. The rectifying contact as defined in claim 1 wherein the p-type oxide material further includes at least one of gallium or indium.

13. A p-type oxide material, comprising:

a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and

a metal species selected from zinc, tin, and combinations thereof, the metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material;

wherein the p-type oxide material is adapted to provide a rectifying contact to an other oxide material.

14. The p-type oxide material as defined in claim 13 wherein the copper species is present in an amount of about 50 atomic % of total metal in the p-type oxide material, and wherein the metal species is present in an amount of about 50 atomic % of total metal in the p-type oxide material.

15. The p-type oxide material as defined in claim 13 wherein the copper species is present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material, and wherein the metal species is present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material.

16. The p-type oxide material as defined in claim 13 wherein the other oxide material is selected from an oxide of zinc, tin, indium, gallium, and combinations thereof.

17. The p-type oxide material as defined in claim 16 wherein the other oxide is selected from zinc oxide, tin oxide, indium oxide, zinc indium oxide, zinc tin oxide, gallium indium oxide, zinc indium gallium oxide, zinc tin gallium oxide and combinations thereof.

18. The p-type oxide material as defined in claim 13 wherein the other oxide is selected from an n-type oxide material and a substantially insulating oxide material.

19. The p-type oxide material as defined in claim 13 wherein the p-type oxide material is at least semi-transparent.

20. The p-type oxide material as defined in claim 13 wherein the metal species is a metal oxide material.

21. A diode, comprising:

an n-type oxide material; and

a p-type oxide material established in electrical contact with the n-type oxide material, the p-type oxide material including a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, and a metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, the metal species selected from zinc, tin, and combinations thereof;

wherein the p-type oxide material is adapted to provide a rectifying contact to an other oxide material selected from the n-type oxide material and a substantially insulating oxide material.

22. The diode as defined in claim 21, further comprising a substantially insulating oxide material positioned between the n-type oxide material and the p-type oxide material.

23. The diode as defined in claim 21 wherein the substantially insulating oxide material is selected from zinc tin oxide, zinc indium oxide, zinc oxide, zinc gallium oxide, zinc indium gallium oxide, indium gallium oxide, zinc tin gallium oxide, and combinations thereof.

24. The diode as defined in claim 21 wherein the p-type oxide material includes the copper species in an amount of about 50 atomic % of total metal in the p-type oxide material and the metal species in an amount of about 50 atomic % of total metal in the p-type oxide material.

25. The diode as defined in claim 21 wherein the copper species is present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material, and wherein the metal species is present in an amount ranging from about 25 atomic % to about 75 atomic % of total metal in the p-type oxide material.

26. The diode as defined in claim 21 wherein the n-type oxide material is selected from an oxide of zinc, tin, indium, gallium, and combinations thereof.

27. The diode as defined in claim 26 wherein the n-type oxide material is selected from zinc oxide, tin oxide, indium oxide, zinc indium oxide, zinc tin oxide, gallium indium oxide, zinc indium gallium oxide, zinc tin gallium oxide, and combinations thereof.

28. The diode as defined in claim 21 wherein the diode is at least semi-transparent.

29. The diode as defined in claim 21, further comprising a substrate upon which the n-type oxide material and the p-type oxide material are established.

30. The diode as defined in claim 21 wherein the n-type oxide material is indium tin oxide, and wherein the diode further comprises a zinc tin oxide material positioned between the indium tin oxide and the p-type oxide material.

31. The diode as defined in claim 21 wherein the diode exhibits a forward-to-reverse current ratio greater than about 10.

32. The diode as defined in claim 21 wherein the diode exhibits a forward-to-reverse current ratio greater than about 1000.

33. The diode as defined in claim 21 wherein the metal species is a metal oxide material.

34. A rectifying contact, comprising:

a p-type oxide material electrically coupled to an n-type oxide material, thereby forming a p-n junction, the p-type oxide material including;

a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and

a metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, the metal species selected from tin, zinc, and combinations

thereof.

35. The rectifying contact as defined in claim 34, further comprising a substantially insulating oxide material disposed between the p-type oxide material and the n-type oxide material, thereby forming a p-i-n junction.

36. A method of making a diode, comprising:

providing a rectifying contact having a p-type oxide material, including;

a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and

a metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material, the metal species selected from tin, zinc, and combinations thereof; and

establishing the p-type oxide material in electrical contact with an n-type oxide material, thereby forming a p-n junction.

37. The method as defined in claim 36, further comprising establishing a substantially insulating oxide material between the p-type oxide material and the n-type oxide material, thereby forming a p-i-n junction.

38. The method as defined in claim 36, further comprising establishing the p-n junction on a substrate.

39. The method as defined in claim 36 wherein establishing the p-type oxide material in electrical contact with the n-type oxide material is accomplished via sputter deposition at ambient temperature.

40. A method of using a p-type oxide material, the method comprising:

establishing the p-type oxide material in electrical contact with an n-type oxide material, the p-type oxide material including;

a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material; and

a metal species selected from zinc, tin, and combinations thereof, the metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material;

wherein the p-type oxide material is adapted to provide a rectifying contact to an other oxide material.

41. A diode, comprising:

an n-type oxide material; and

means for providing rectifying contacts to the n-type oxide material, the means including a copper species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the rectifying contacts means, and a metal species selected from zinc, tin, and combinations thereof, the metal species present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the rectifying contacts means.