Nitride semiconductor light emitting device
First Claim
1. A nitride semiconductor light emitting device (LED), comprising p-type and n-type nitride layers, and a plurality of active layers sequentially stacked between the p-type and n-type nitride layers to emit light having different wavelengths, wherein the plurality of active layers comprise at least a first active layer to emit a first wavelength light, and a second active layer to emit a second wavelength light, of which wavelength is longer than that of the first wavelength light, both the first and second active layers being composed of at least one quantum well layer and a quantum barrier layer alternately arranged, and wherein the first active layer is disposed closer to the p-type nitride layer than the second active layer, and the number of quantum well layers of the first active layer is less than that of the second active layer.
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Abstract
Disclosed herein is a nitride semiconductor light emitting device, which comprises plural active layers emitting light of different wavelengths. The device comprises p-type and n-type nitride layers, and a plurality of active layers sequentially stacked between the p-type and n-type nitride layers to emit light having different wavelengths. The active layers comprise at least a first active layer to emit a first wavelength light, and a second active layer to emit a second wavelength light, of which wavelength is longer than that of the first wavelength light. Both the first and second active layers are composed of at least one quantum well layer and a quantum barrier layer alternately arranged, and the first active layer is disposed closer to the p-type nitride layer than the second active layer. The number of quantum well layers of the first active layer is less than that of the second active layer.
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10 Claims
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1. A nitride semiconductor light emitting device (LED), comprising p-type and n-type nitride layers, and a plurality of active layers sequentially stacked between the p-type and n-type nitride layers to emit light having different wavelengths,
wherein the plurality of active layers comprise at least a first active layer to emit a first wavelength light, and a second active layer to emit a second wavelength light, of which wavelength is longer than that of the first wavelength light, both the first and second active layers being composed of at least one quantum well layer and a quantum barrier layer alternately arranged, and wherein the first active layer is disposed closer to the p-type nitride layer than the second active layer, and the number of quantum well layers of the first active layer is less than that of the second active layer.
Specification