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LIGHT EMITTING DIODE WTH DEGENERATE COUPLING STRUCTURE

  • US 20070114541A1
  • Filed: 01/22/2007
  • Published: 05/24/2007
  • Est. Priority Date: 02/14/2003
  • Status: Active Grant
First Claim
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1. A method of forming a light emitting device (LED) that incorporates a Group III nitride layer, the method comprising:

  • forming an n-type Group III nitride active region on an n-type semiconductor layer;

    forming a p-type semiconductor layer on the active region;

    forming a degenerate junction structure on the p-type semiconductor layer;

    forming an n-type contact layer on the degenerate junction structure, wherein the degenerate junction structure includes at least one p-n junction for coupling the p-type semiconductor layer to the n-type contact layer to thereby permit electric current flow from the n-type contact layer to the active region.

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