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Vertical gallium-nitride based light emitting diode

  • US 20070114552A1
  • Filed: 10/16/2006
  • Published: 05/24/2007
  • Est. Priority Date: 11/23/2005
  • Status: Active Grant
First Claim
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1. A vertical gallium-nitride (GaN)-based light emitting diode (LED) comprising:

  • an n-electrode;

    a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode;

    a p-electrode formed under the light-emitting structure;

    a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR);

    a plating seed layer formed under the passivation layer and the p-electrode; and

    a support layer formed under the plating seed layer.

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