Vertical gallium nitride based light emitting diode
First Claim
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1. A vertical GaN-based LED comprising:
- an n-type bonding pad;
an n-electrode formed under the n-type bonding pad;
a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode;
a p-electrode formed under the light-emitting structure; and
a support layer formed under the p-electrode, wherein the light-emitting structure has one or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.
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Abstract
A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.
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Citations
7 Claims
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1. A vertical GaN-based LED comprising:
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an n-type bonding pad;
an n-electrode formed under the n-type bonding pad;
a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode;
a p-electrode formed under the light-emitting structure; and
a support layer formed under the p-electrode, wherein the light-emitting structure has one or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification