×

Vertical gallium nitride based light emitting diode

  • US 20070114564A1
  • Filed: 11/21/2006
  • Published: 05/24/2007
  • Est. Priority Date: 11/24/2005
  • Status: Active Grant
First Claim
Patent Images

1. A vertical GaN-based LED comprising:

  • an n-type bonding pad;

    an n-electrode formed under the n-type bonding pad;

    a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode;

    a p-electrode formed under the light-emitting structure; and

    a support layer formed under the p-electrode, wherein the light-emitting structure has one or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.

View all claims
  • 3 Assignments
Timeline View
Assignment View
    ×
    ×