Power Semiconductor Circuit

• US 20070114665A1
• Filed: 10/16/2006
• Published: 05/24/2007
• Est. Priority Date: 04/16/2004
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Bayerer, Reinhold
• Granted Patent: US 7,800,213 B2
• Time in Patent Office: Days
• US Class Current: 257/747
• CPC Class Codes: H01L 2224/2402 Laminated, e.g. MCM-L type
• CPC Class Codes: H01L 2224/24051 Conformal with the semiconductor or solid-state device
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/30107 Inductance

Abstract

A power semiconductor circuit has a power semiconductor module (2) embodied as a flat assembly. A particularly compact and space-saving production of a power semiconductor circuit may be achieved with the possibilities provided by an embodiment of the power semiconductor module, whereby the power semiconductor module (2) is arranged directly on a top track (3) of a power supply and/or output tracking (11) and a cooling device (5) is integrated in the tracking (11).

Claims

1. A power semiconductor circuit, comprising

a power semiconductor module which is in the form of a flat subassembly and in which at least one electronic component is arranged on a substrate and is contact-connected to a pad of a film via a contact area on the top side,

a busbar system which supplies and/or dissipates current and on whose one cover busbar the power semiconductor module is arranged, and

a cooling device which is integrated in the busbar system.

2. The power semiconductor circuit according to claim 1, wherein the cooling device directly cools the cover busbar.

3. The power semiconductor circuit according to claim 1, wherein the cooling device is an air cooling system.

4. The power semiconductor circuit according to claim 1, wherein the cooling device is a liquid cooling system.

5. The power semiconductor circuit according to claim 4, wherein the liquid coolant is electrically insulating.

6. The power semiconductor circuit according to claim 1, wherein the busbar system is a busbar system packet comprising a plurality of conductors which are in the form of plates and are arranged such that they are insulated on parallel planes.

7. The power semiconductor circuit according to claim 6, wherein the conductors which are in the form of plates are connected to one another by means of lamination.

8. The power semiconductor circuit according to claim 6, wherein the cooling device is likewise in the form of a plate and is arranged, like a sandwich, between the busbars which are in the form of plates.

9. The power semiconductor circuit according to claim 1, wherein the electronic component is connected to the substrate by way of a contact area on the underside and the substrate comprises a conductive material.

10. The power semiconductor circuit according to claim 1, wherein provision is made of a control circuit which is arranged, in the form of a flat unit, above the power semiconductor module.

11. The power semiconductor circuit according to claim 1, wherein the power semiconductor module and the busbar system are connected to one another without screw connections.

12. The power semiconductor circuit according to claim 1, wherein the film extends as far as the edge of the cover busbar.

13. The power semiconductor circuit according to claim 12, wherein the busbar system has, in addition to the cover busbar, at least one further busbar, the film extending as far as said further busbar.

14. The power semiconductor circuit according to claim 13, wherein the film contact-connects a pad of the at least one further busbar.

15. A method for producing a power semiconductor circuit, comprising the following steps of:

providing a power semiconductor module which has a contact area on the top side, is in the form of a flat subassembly and in which at least one electronic component is arranged on a substrate, a busbar system which supplies and/or dissipates current and has a cover busbar on which the power semiconductor module is arranged, and a cooling device, and

using the contact area to contact-connect the power semiconductor module to a pad of a film which is laminated to the power semiconductor module.

16. The method according to claim 15, wherein the film is laminated together with the lamination of the busbar system.

17. The method according to claim 16, wherein the film is effected together with the lamination of the busbar system.

18. A power semiconductor circuit, comprising

a power semiconductor module which is in the form of a flat subassembly and in which at least one electronic component is arranged on a substrate and is contact-connected to a pad of a film via a contact area on the top side,

a busbar system which supplies and/or dissipates current and on whose one cover busbar the power semiconductor module is arranged, and

a liquid cooling device which is integrated in the busbar system, wherein the liquid coolant is electrically insulating.

19. The power semiconductor circuit according to claim 18, wherein the busbar system is a busbar system packet comprising a plurality of conductors which are in the form of plates and are arranged such that they are insulated on parallel planes.

20. The power semiconductor circuit according to claim 19, wherein the conductors which are in the form of plates are connected to one another by means of lamination.