Non-Volatile Memory and Method With Control Gate Compensation for Source Line Bias Errors
First Claim
1. In a non-volatile memory device having individual pages of memory cells to be sensed in parallel, each memory cell having a source, a drain, a charge storage unit and a control gate for controlling a conduction current along said drain and source, a method of sensing a page of memory cells, comprising:
- providing a page source line;
coupling the source of each memory cell of said page to said page source line;
coupling the page source lines of individual pages to an aggregate node for connection to a source voltage control circuit for sensing operation;
coupling the control gate of each memory cell of said page to a word line; and
providing a predetermined word line voltage to the word line of each memory cell of said page for sensing operation, wherein said predetermined word line voltage is referenced with respect to said aggregate node so as not to be affected by any voltage differences between said aggregate node and a ground reference.
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Accused Products
Abstract
Source line bias is an error introduced by a non-zero resistance in the ground loop of the read/write circuits. During sensing the source of a memory cell is erroneously biased by a voltage drop across the resistance and results in errors in the applied control gate and drain voltages. This error is minimized when the applied control gate and drain voltages have their reference point located as close as possible to the sources of the memory cells. In one preferred embodiment, the reference point is located at a node where the source control signal is applied. When a memory array is organized in pages of memory cells that are sensed in parallel, with the sources in each page coupled to a page source line, the reference point is selected to be at the page source line of a selected page via a multiplexor.
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Citations
22 Claims
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1. In a non-volatile memory device having individual pages of memory cells to be sensed in parallel, each memory cell having a source, a drain, a charge storage unit and a control gate for controlling a conduction current along said drain and source, a method of sensing a page of memory cells, comprising:
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providing a page source line;
coupling the source of each memory cell of said page to said page source line;
coupling the page source lines of individual pages to an aggregate node for connection to a source voltage control circuit for sensing operation;
coupling the control gate of each memory cell of said page to a word line; and
providing a predetermined word line voltage to the word line of each memory cell of said page for sensing operation, wherein said predetermined word line voltage is referenced with respect to said aggregate node so as not to be affected by any voltage differences between said aggregate node and a ground reference. - View Dependent Claims (2, 3, 4, 5, 6)
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7. In a non-volatile memory device having individual pages of memory cells to be sensed in parallel, each memory cell having a source, a drain, a charge storage unit and a control gate for controlling a conduction current along said drain and source, said memory device, comprising:
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a page source line coupled to the source of each memory cell in a page;
an aggregate node coupled to individual page source lines;
a source voltage control circuit coupled via said aggregate node to a page source line of a selected page for memory operation;
a word line coupling to the control gate of each memory cell of said page; and
a word line voltage supply for providing a predetermined word line voltage to the word line of each memory cell of said page for sensing operation, wherein said predetermined word line voltage is referenced with respect to said aggregate node so as not to be affected by any voltage differences between said aggregate node and a ground reference. - View Dependent Claims (8, 9, 10, 11, 12)
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13. In a non-volatile memory device having individual pages of memory cells to be sensed in parallel, each memory cell having a source, a drain, a charge storage unit and a control gate for controlling a conduction current along said drain and source, a method of sensing a page of memory cells, comprising:
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providing a page source line;
coupling the source of each memory cell of said page to said page source line;
switching said page source line to a source voltage control circuit for sensing operation;
coupling the control gate of each memory cell of said page to a word line; and
providing a predetermined word line voltage to the word line of each memory cell of said page for sensing operation, wherein said predetermined word line voltage is referenced with respect to said aggregate node so as not to be affected by any voltage differences between said aggregate node and a ground reference. - View Dependent Claims (14, 15, 16, 17, 18)
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19. In a non-volatile memory device having individual pages of memory cells to be sensed in parallel, each memory cell having a source, a drain, a charge storage unit and a control gate for controlling a conduction current along said drain and source, said memory device, comprising:
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a page source line coupled to the source of each memory cell in a page;
a page source line multiplexor;
a source voltage control circuit coupled via said page source line multiplexor to a page source line of a selected page for memory operation;
a word line coupling to the control gate of each memory cell of said page; and
a word line voltage supply for providing a predetermined word line voltage to the word line of each memory cell of said page for sensing operation, wherein said predetermined word line voltage is referenced with respect to said aggregate node so as not to be affected by any voltage differences between said aggregate node and a ground reference. - View Dependent Claims (20, 21, 22)
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Specification