Method and system for performing different deposition processes within a single chamber

• US 20070116888A1
• Filed: 11/18/2005
• Published: 05/24/2007
• Est. Priority Date: 11/18/2005
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Faguet, Jacques
• Application Number:
  US11/281,343
• Publication Number:
  US 20070116888A1
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45542 Plasma being used non-continuously during the ALD reactions
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45591 Fixed means, e.g. wings, baffles
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means

Abstract

A method, computer readable medium, and system for vapor deposition on a substrate that introduce a first process gas composition to a process space according to a first vapor deposition process, deposit a first film on the substrate, introduce a second process gas composition into a second process space different in size than the first process space, and deposit a second film on the substrate from the second process gas composition. As such, the system includes a process chamber including a first process space having a first volume. The process chamber further includes a second process space that includes at least a part of the first process space and that has a second volume different from the first volume. The first process space is configured for a first chemical vapor deposition, and the second process space is configured for a second chemical vapor deposition.

Claims

1. A method for material deposition on a substrate in a vapor deposition system, comprising:

disposing said substrate in said vapor deposition system having a first process space defined above the substrate;

introducing a first process gas composition to said first process space according to a first vapor deposition process;

depositing a first film on said substrate;

introducing a second process gas composition into a second process space different in size from the first process space; and

depositing a second film on said substrate from the second process gas composition.

2. The method of claim 1, wherein said depositing a second film comprises:

translating a substrate stage to a position that improves uniformity of a deposited second film.

3. The method of claim 2, wherein said depositing comprises:

depositing the second film by plasma enhanced chemical vapor deposition; and

setting the substrate stage to a position in which the plasma uniformity is better than 2% across a 200 mm diameter of the substrate stage.

4. The method of claim 3, wherein said setting comprises:

setting the substrate stage to a position in which the plasma uniformity is better than 1% across a 200 mm diameter of the substrate stage.

5. The method of claim 1, wherein the depositing a first film and the depositing a second film comprise depositing the same material.

6. The method of claim 1, wherein the depositing a first film and the depositing a second film comprise depositing different materials.

7. The method of claim 1, wherein said depositing a first film comprises:

depositing at least one of a tantalum film, a tantalum nitride film, or a tantalum carbonitride film.

8. The method of claim 1, wherein said depositing a second film comprises:

depositing at least one of an Al film, a Cu film, a Zn film, a metal silicide film, or a germanium-including film, or a combination of any one of these films separately or as an alloy.

9. The method of claim 1, wherein:

said depositing a first film comprises depositing a metallization line including at least one of a tantalum film, a tantalum nitride film, a tantalum carbonitride film, an Al film, a Cu film, a Zn film, a metal silicide film, or a germanium-including film, or a combination of any one of these films separately or as an alloy; and

said depositing a second film comprises depositing an interlevel metallization insulation including at least one of a zirconium oxide film, a hafnium oxide film, a silicon oxide film, a silicon nitride film, a titanium nitride, or a GaN film, or a combination of any one of these films.

10. The method of claim 1, wherein said disposing comprises disposing said substrate in a chamber configured to perform at least one of an atomic layer deposition (ALD) process, a plasma enhanced chemical vapor deposition (PECVD) process, or a thermal chemical vapor deposition process.

11. The method of claim 10, wherein:

said depositing a first film comprises depositing the first film using said ALD process; and

said depositing a second film comprises depositing the second film on said substrate using said PECVD process.

12. The method of claim 10, wherein:

said depositing a first film comprises depositing the first film using said thermal CVD process; and

said depositing a second film comprises depositing the second film on said substrate using said PECVD process.

13. The method of claim 10, wherein:

said depositing a first film comprises depositing the first film using said ALD process; and

said depositing a second film comprises depositing the second film on said substrate using said thermal CVD process.

14. The method of claim 1, wherein the introducing a first process gas composition comprises:

introducing the first process gas composition into a region above the substrate surrounded by a shield.

15. The method of claim 14, further comprising:

evacuating said region above the substrate by pumping the first process gas composition through holes in the shield.

16. The method of claim 1, wherein the depositing a second film comprises:

applying RF energy at a frequency from 0.1 to 100 MHz.

17. The method of claim 1, further comprising:

introducing a purge gas after said depositing a first film.

18. The method of claim 1, further comprising:

providing a substrate bias to the substrate at least during deposition of the second film.

19. The method of claim 18, wherein the providing a substrate bias comprises:

biasing the substrate with at least one of a DC voltage or a RF voltage having a frequency from 0.1 to 100 MHz.

20. A computer readable medium containing program instructions for execution on a substrate processing system processor, which when executed by the processor, cause the substrate processing system to perform the any one of the steps recited in claims 1-19.

21. A system for thin film vapor deposition on a substrate, comprising:

a process chamber including,

a first process space having a first volume, and

a second process space that includes at least a part of the first process space and that has a second volume different from the first volume;

said first process space configured for a first chemical vapor deposition; and

said second process space configured for a second chemical vapor deposition.

22. The system of claim 21, further comprising:

a substrate stage configured to hold the substrate during both the first chemical vapor deposition process and the second chemical vapor deposition.

23. The system of claim 22, further comprising:

a first chamber assembly having a gas supply inlet; and

a second chamber assembly supporting the substrate stage and configured to support a vacuum pump configured for evacuation of the process chamber.

24. The system of claim 23, wherein:

said first process space is defined in part by a spacing less than or equal to 20 mm from a topmost part of the substrate stage to a gas inlet surface of the first chamber assembly, and

said second process space is defined in part by a spacing greater than or equal to 20 mm from the topmost part of the substrate stage to the gas inlet surface of the first chamber assembly.

25. The system of claim 22, further comprising:

a process volume adjustment mechanism configured to translate the substrate stage in a direction to change a volume of the first and second process spaces.

26. The system of claim 21, wherein said second process space comprises a space having an aspect ratio of height to width that is greater than 0.1.

27. The system of claim 21, wherein said second process space comprises a space having an aspect ratio of height to width that is greater than 0.5.

28. The system of claim 21, further comprising:

a shield configured to surround a peripheral edge of the first process space.

29. The system of claim 28, wherein the shield comprises a perforated shield.

30. The system of claim 28, further comprising:

a substrate stage configured to hold the substrate during the first chemical vapor deposition and the second chemical vapor deposition; and

said substrate stage having a peripheral lip configured to contact the peripheral edge of the shield.

31. The system of claim 30, wherein said peripheral lip is configured to form a seal to the peripheral edge.

32. The system of claim 31, further comprising:

a vacuum pump configured to evacuate at least the first process space.

33. The system of claim 21, wherein said first process space is configured for at least one of atomic layer deposition (ALD) or thermal chemical vapor deposition (CVD).

34. The system of claim 21, wherein said first process space is configured for deposition of at least one of a tantalum film, a tantalum nitride, or a tantalum carbonitride.

35. The system of claim 21, wherein said second process space is configured for deposition of at least one of an Al film, a Cu film, a Zn film, a metal silicide film, or a germanium-including film, or a combination of any one of these films separately or as an alloy.

36. The system of claim 21, wherein said second process space is configured for deposition of at least one of a zirconium oxide film, a hafnium oxide film, a silicon oxide film, a silicon nitride, a titanium nitride, or a GaN film, or a combination of any one of these films.

37. The system of claim 21, further comprising:

an RF power supply configured to output an RF energy at a frequency from 0.1 to 100 MHz.

38. The system of claim 37, wherein said second process space is configured for plasma enhanced chemical vapor deposition (CVD).

39. The system of claim 37, further comprising:

an electrode connected to the RF power supply and configured to couple said RF energy into at least one of the first and second process space.

40. The system of claim 21, further comprising:

a bias supply configured to output at least one of a DC voltage or an RF voltage at a frequency from 0.1 to 100 MHz.

41. The system of claim 40, further comprising:

an electrode configured to apply a bias said substrate, connected to the RF bias supply and configured to couple said RF voltage onto said substrate.

42. The system of claim 21, further comprising:

a controller configured to control a process in the process chamber.

43. The system of claim 42, wherein the controller is programmed to:

introduce a first process gas composition to said first process space according to a first vapor deposition process;

deposit a first film on said substrate;

translate a position of a substrate stage holding the substrate to form a second process space;

introduce a second process gas composition into the second process space;

deposit a second film on said substrate from said second process composition.