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METHODS OF FABRICATING HIGHLY CONDUCTIVE REGIONS IN SEMICONDUCTOR SUBSTRATES FOR RADIO FREQUENCY APPLICATIONS

  • US 20070117345A1
  • Filed: 01/23/2007
  • Published: 05/24/2007
  • Est. Priority Date: 11/20/2001
  • Status: Active Grant
First Claim
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1. A method of fabricating highly conductive regions in semiconductor substrates for radio frequency applications, comprising:

  • creating a moat on a surface of a Si (silicon) substrate using standard lithography techniques, followed by an anisotropic wet etching; and

    depositing a multilayer metallic thin film into the moat.

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