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APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION

  • US 20070119370A1
  • Filed: 11/06/2006
  • Published: 05/31/2007
  • Est. Priority Date: 11/04/2005
  • Status: Abandoned Application
First Claim
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1. A chamber for processing substrates, comprising:

  • a substrate support having a substrate receiving surface;

    a chamber lid assembly comprising;

    a showerhead assembly having an inner region and an outer region;

    a cooling assembly in contact with the showerhead assembly;

    a plasma baffle disposed within the inner region of the showerhead assembly;

    a plasma screen disposed above the showerhead assembly and configured to direct a first process gas to the plasma baffle and a second process gas to the outer region of the showerhead assembly;

    a first gas region located between the plasma baffle and the plasma screen; and

    a second gas region located between the outer region of the showerhead assembly and the cooling assembly; and

    a process region situated between the substrate receiving surface and the chamber lid assembly.

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