APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION
First Claim
1. A chamber for processing substrates, comprising:
- a substrate support having a substrate receiving surface;
a chamber lid assembly comprising;
a showerhead assembly having an inner region and an outer region;
a cooling assembly in contact with the showerhead assembly;
a plasma baffle disposed within the inner region of the showerhead assembly;
a plasma screen disposed above the showerhead assembly and configured to direct a first process gas to the plasma baffle and a second process gas to the outer region of the showerhead assembly;
a first gas region located between the plasma baffle and the plasma screen; and
a second gas region located between the outer region of the showerhead assembly and the cooling assembly; and
a process region situated between the substrate receiving surface and the chamber lid assembly.
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Abstract
Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a process chamber is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The process chamber comprises components that are capable of being electrically insulated, electrically grounded or RF energized. In one example, a chamber body and a gas manifold assembly are grounded and separated by electrically insulated components, such as an insulation cap, a plasma screen insert and an isolation ring. A showerhead, a plasma baffle and a water box are positioned between the insulated components and become RF hot when activated by a plasma generator. Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber.
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Citations
54 Claims
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1. A chamber for processing substrates, comprising:
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a substrate support having a substrate receiving surface;
a chamber lid assembly comprising;
a showerhead assembly having an inner region and an outer region;
a cooling assembly in contact with the showerhead assembly;
a plasma baffle disposed within the inner region of the showerhead assembly;
a plasma screen disposed above the showerhead assembly and configured to direct a first process gas to the plasma baffle and a second process gas to the outer region of the showerhead assembly;
a first gas region located between the plasma baffle and the plasma screen; and
a second gas region located between the outer region of the showerhead assembly and the cooling assembly; and
a process region situated between the substrate receiving surface and the chamber lid assembly. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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44. A chamber for processing substrates, comprising:
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a substrate support having a substrate receiving surface;
a chamber lid comprising;
a channel at a central portion of the chamber lid;
a tapered bottom surface extending from the channel to a plasma screen disposed above a plasma baffle and a showerhead, wherein the showerhead is shaped and sized to substantially cover the substrate receiving surface;
a first conduit coupled to a first gas inlet within the channel; and
a second conduit coupled to a second gas inlet within the channel, wherein the first conduit and the second conduit are positioned to provide a circular gas flow pattern for a process gas.
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45. A chamber for processing substrates, comprising:
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a substrate support having a substrate receiving surface;
a chamber lid assembly comprising;
a showerhead assembly having an inner region and an outer region;
a plasma screen disposed above the showerhead assembly and configured to direct a first process gas to the inner region and a second process gas to the outer region; and
a process region situated between the substrate receiving surface and the chamber lid assembly. - View Dependent Claims (46, 47, 48, 49, 50, 51, 52, 53, 54)
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Specification