CHEMICAL VAPOR DEPOSITION CHAMBER WITH DUAL FREQUENCY BIAS AND METHOD FOR MANUFACTURING A PHOTOMASK USING THE SAME

• US 20070119373A1
• Filed: 11/29/2006
• Published: 05/31/2007
• Est. Priority Date: 07/29/2005
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Kumar, Ajay, Yau, Wai-Fan, Grewal, Virinder
• Granted Patent: US 7,658,969 B2
• Time in Patent Office: Days
• US Class Current: 118/723.I
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32706 Polarising the substrate
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process

Abstract

A method and apparatus for process integration in manufacture of a ask are disclosed. In one embodiment, a cluster tool suitable for process integration in manufacture of a photomask including a vacuum transfer chamber having coupled thereto at least one hard mask deposition chamber and at least one plasma chamber configured for etching chromium. In another embodiment, a method for process integration in manufacture of a photomask includes depositing a hard mask on a substrate in a first processing chamber, depositing a resist layer on the substrate, patterning the resist layer, etching the hard mask through apertures formed in the patterned resist layer in a second chamber; and etching a chromium layer through apertures formed in the hard mask in a third chamber.

Claims

1. A chemical vapor deposition (CVD) chamber comprising:

a chamber body;

a substrate support disposed in an interior volume of the chamber body;

an electrode embedded in the substrate support;

a first RF power source coupled to the electrode;

a second RF power source coupled to the electrode;

a showerhead disposed in the interior volume of the chamber body and defining a plenum between the chamber body;

a third RF power source coupled to the showerhead; and

a gas panel coupled to the chamber body and providing a source of a hydrocarbon compound to the interior volume through the showerhead.

2. The CVD chamber of claim 1, wherein the hydrocarbon compound has a formula C_xH_y, wherein x has a range of 2 to 4 and y has a range of 2 to 10.

3. The CVD chamber of claim 1, wherein the gas panel further contains at least one of an oxygen containing or fluorine containing compound.

4. The CVD chamber of claim 1, wherein the hydrocarbon compound has a formula C_AH_BO_CF_D, where A has a range of between 1 and 24, B has a range of between 0 and 50, C has a range of 0 to 10, D has a range of 0 to 50, and the sum of B and D is at least 2.

5. The CVD chamber of claim 1, wherein the first RF power source is capable of providing up to about 1000 Watts at a frequency range of about 2 to about 27 MHz.

6. The CVD chamber of claim 1, further comprising:

a reticle adapter disposed on the substrate support.

7. The CVD chamber of claim 6, wherein the reticle adapter further comprises:

a cover ring disposed on the substrate support; and

a capture ring disposed on the cover ring and defining a substrate receiving pocket therewith.

8. The CVD chamber of claim 1, further comprising;

a matching circuit coupled to the first and second RF sources; and

a single feed coupling the matching circuit to the first electrode.

9. A method of depositing a hard mask layer, comprising:

providing a substrate on a substrate support disposed in a chemical vapor deposition chamber, wherein the substrate is suitable for fabricating a photomask and includes a quartz layer and a chromium layer;

flowing a hydrocarbon into the chemical vapor deposition chamber through a showerhead energized with a first RF signal;

a supplying a two RF signals having different frequencies to an electrode disposed in the substrate support; and

forming a plasma from the hydrocarbon to deposit a hard mask layer on the substrate.

10. The method of claim 9, wherein a power applied to the showerhead is greater than a power applied to the electrode.

11. The method of claim 9, wherein the hydrocarbon further comprises:

a gas having a formula C_xH_y, wherein x has a range of 2 to 4 and y has a range of 2 to 10.

12. The method of claim 9 further comprising:

flowing at least one of an oxygen containing or fluorine containing compound into the chamber with the hydrocarbon.

13. The method of claim 9, wherein the hydrocarbon further comprises:

a gas having a formula C_AH_BO_CF_D, where A has a range of between 1 and 24, B has a range of between 0 and 50, C has a range of 0 to 10, D has a range of 0 to 50, and the sum of B and D is at least 2.

14. The method of claim 9 further comprising:

supporting the substrate on a reticle adapter.

15. The method of claim 9, wherein the hard mask layer is a SiON layer.

16. The method of claim 9, wherein the hard mask layer is an α

-carbon material.

17. The method of claim 9 further comprising:

doping the hard mask layer with nitrogen.

18. The method of claim 9 further comprising:

flowing a nitrogen-containing gas into the chamber with the hydrocarbon gas.

19. The method of claim 9 further comprising:

maintaining the substrate at a temperature less than about 450 degrees Celsius during deposition of the hardmask layer.