Back-biased face target sputtering based memory data sensing technique

• US 20070119705A1
• Filed: 09/14/2006
• Published: 05/31/2007
• Est. Priority Date: 09/15/2003
• Status: Abandoned Application

• Current Assignee: 4D-S Pty, Ltd.
• Original Assignee: 4D-S Pty, Ltd.
• Inventors: Nagashima, Makoto
• Application Number:
  US11/522,080
• Publication Number:
  US 20070119705A1
• Time in Patent Office: Days
• US Class Current: 204/192.250
• CPC Class Codes: C23C 14/352 using more than one target C23C14/56 takes precedence
• CPC Class Codes: H01J 37/3402 using supplementary magnetic fields

Abstract

Systems and methods are disclosed to form an exemplary memory structure by flowing argon gas and oxygen gas in a deposition chamber; providing a low oxygen flow rate approximately between 0 and ten percent (10%) of an argon flow rate, a pressure approximately between 2×10⁻⁵ Torr and 1×10⁻³ Torr, and a deposition temperature approximately between 340° C. and 450° C.; and the composition of sputtering target is PCMO (Pr_1-xCa_xMnO₃, where X is between 0.1 and 0.9). The process forms a PCMO (Pr_1-xCa_xMnO₃, X=0.1-0.9) material film on the wafer and a plurality of current sensors coupled to PCMO memory cells.

Claims