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Semiconductor device and a method of manufacturing the same

  • US 20070120194A1
  • Filed: 01/25/2007
  • Published: 05/31/2007
  • Est. Priority Date: 08/04/2003
  • Status: Abandoned Application
First Claim
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1. A semiconductor device including a trench gate type MISFET, comprising:

  • a semiconductor substrate having a main surface and a bottom surface opposite to said main surface, said semiconductor substrate having a first conductivity type;

    a first semiconductor layer formed on the main surface of the semiconductor substrate, said first semiconductor layer having a top surface apart from the semiconductor substrate, said first semiconductor layer having the first conductivity type, and said first semiconductor layer acting as a drain region of the MISFET;

    a trench formed on the top surface of the first semiconductor layer, a distance between the top surface of the first semiconductor layer and a bottom of the trench being not more than 1 μ

    m;

    a gate insulating film of the MISFET formed on an inner surface of the trench;

    a gate electrode of the MISFET formed on the gate insulating film in the trench;

    a channel forming region of the MISFET formed in the first semiconductor layer, said channel forming region being in contact with the trench, said bottom of the trench being positioned below a bottom of the channel forming region, and said channel forming region having a second conductivity type opposite to the first conductivity type;

    a source region of the MISFET formed over the channel forming region in the first semiconductor layer;

    said source region being in contact with the trench, and said source region having the first conductivity type; and

    a punch through stopper region formed between the source region and channel forming region in the first semiconductor layer, said punch through stopper region having the second conductivity type, and said punch through stopper region having a higher impurity concentration than the channel forming region.

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